Contents Outline

Goal:

• Be able to handle the Two Terminal MOS

Structure/Capacitor under different bias conditions.

• Learn to draw the energy band diagram of Two Terminal

MOS Structure/Capacitor for an isolated and Combined
MOS System under no bias and external bias condition.

• Understand the different region of operation of MOS

System under the influences of external bias.

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 Metal Oxide Semiconductor (MOS) Structure

• The structure consists of three layers:

• The metal gate electrode, the insulating oxide (SiO2) layer, and the p-
type bulk semiconductor (Si), called the substrate.
• As such, the MOS structure forms a capacitor, with the gate and the
substrate acting as the two terminals (plates) and the oxide layer as the
dielectric.
• A basic understanding of the bias conditions for establishing different
carrier concentrations in the substrate will also provide valuable insight
into the operating conditions of more complicated MOSFET structures.

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 Two Terminal MOS Structure

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 Energy band diagrams (EBD) of an isolated components
that make up the MOS system
Metal EBD Oxide EBD Semiconductor EBD

• For the given materials, few parameters are fixed as mentioned here:
Work function of the Metal and Semiconductor, Electron affinity of Oxide
and Semiconductor, Energy Band Gap of Oxide and Semiconductor.
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 Energy band diagram of the combined MOS system

• Energy band diagram of the MOS system in contact

at equilibrium.
• At Equilibrium, is Constant.

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 Ideal Equilibrium MOS Capacitor Energy Bands

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 The MOS System/MOS Capacitor under External Bias

• Now our attention to the electrical behaviour of the MOS

structure under externally applied bias voltages.

• Assume that the substrate voltage is set at VB = 0, and

let the gate voltage be the controlling parameter.

• Depending on the polarity and the magnitude of VG,

three different operating regions can be observed for the
MOS system: accumulation, depletion, and inversion.

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 Accumulation Region

• If a negative voltage VG is applied to the gate electrode, the holes

in the p-type substrate are attracted to the semiconductor-oxide
interface.

• The majority carrier concentration near the surface becomes

larger than the equilibrium hole concentration in the substrate;
hence, this condition is called carrier accumulation on the surface.

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 MOS Capacitor: Accumulation Region
(Energy Band Diagram)

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 MOS Capacitor: Accumulation Region

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 MOS Capacitor - Depletion Region

• Now consider the next case in which a small positive gate bias VG is
applied to the gate electrode.

• Since the substrate bias is zero, the oxide electric field will be directed
towards the substrate in this case. The positive surface potential
causes the energy bands to bend downward near the surface.

• The majority carriers, i.e., the holes in the substrate, will be repelled
back into the substrate as a result of the positive gate bias, and these
holes will leave negatively charged fixed acceptor ions behind. Thus, a
depletion region is created near the surface.

• The thickness of this depletion region on the surface can easily be

found as a function of the surface potential.

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 MOS Capacitor: Depletion Region
(Energy Band Diagram)

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 MOS Capacitor - Depletion Region-Cont…

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 MOS Capacitor - Depletion Region Contd…

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 MOS Capacitor - Inversion Region

• To complete our qualitative overview of different bias

conditions and their effects upon the MOS system,
consider next a further increase in the positive gate bias.

• As a result of the increasing surface potential, the

downward bending of the energy bands will increase as
well.

• Eventually, the mid-gap energy level becomes smaller

than the Fermi level on the surface, which means that
the substrate semiconductor in this region becomes n-
type.

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 MOS Capacitor: Inversion Region
(Energy Band Diagram)

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 MOS Capacitor - Inversion Region-Cont…

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 MOS Capacitor - Inversion Region-Cont…

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 Numerical Examples

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 Summary

• Introduction to the MOS Structure/Capacitor

• MOS region of operation under different bias
condition.
• Drawing energy band diagram for the MOS system.
• Knowing about Few Important expressions of MOS
system which would be very helpful in understanding
the MOSFET system.

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 Few Important questions

1. Why MOS Capacitor is so important for learning the MOS transistor

concepts?
2. What do mean by flat band voltage? Explain the same with the help of
energy band diagram.
3. Why there is a band banding even under no bias condition when different
materials are kept in contact to each other?
4. Draw the 2-D MOS system/Capacitor structure for n-type substrate.
5. Draw the energy band diagram of MOS system for n-type substrate under
different bias condition.
6. Discuss the different region of operation for MOS system for n-type
substrate.

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