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Optical Characterization of Planar Semiconductro Microcavities
Optical Characterization of Planar Semiconductro Microcavities
CHARACTERIZACION OF
PLANAR SEMICONDUCTOR
MICROCAVITIES FOR
CAVITY SWITCHING
Defesa de tese
EXPERIMENTS– 2024
• Theory
• Optical Characterization
• y Experiments – CEA-Grenoble
Fourier Transform Infrared spectroscopy – FTIR
Cavity Ring-Down Spectroscopy – CRDS
Simulations
• Cavity Switching
Experimental results
Simulations
• Conclusions
Previous Works
i
• Emanuel Peinke: “All-optical ultrafast switching of semiconductor
micropillar cavities : basics and applications to quantum optics” (2017) –
PhD Thesis
• CEA-Grenoble :
Internship between March and August 2022 at NPSC – PHELIQs – CEA-Grenoble
• Variable shift
• On demand
• Fast and Efficient
• Single Photon Sources
• Applications on Quantum Communications
– CEA-Grenoble :
Motivation
Lipson et al, Nat. Phot., 2007
• 30% wavelength conversion efficiency
• λ shift only depends on the pump power
• s – CEA-Grenoble :
Introduction
• Planar optical cavities
Mirror reflectance
Material –Refractive index (n)
Dimensions (L)
• Cavity Switching
• Colour Change Experiments
Introduction
• Microcavities composed of Distributed Bragg Reflectors – DBR, and spacer in between
Stopband
𝛌 /𝟒
TOP MIRROR
𝛌 /𝟒
𝛌 /𝟒
𝛌 /𝟒
SPACER 𝟑𝟑 𝛌
𝛌 /𝟒
BOTTOM MIRROR 𝛌 /𝟒
𝛌 /𝟒
𝛌 /𝟒
Reflectivity Measurement
K. Papatryfonos, T. Angelova, A. Brimont, S. Ozaki and S. Adachi. Spectroscopic A. D. Rakić and M. L. Majewski.
B. Reid, S. Guldin, P. R. Smith, M. Tang, ellipsometry and thermoreflectance of Modeling the optical dielectric function
K. Li, A. J. Seeds, H. Liu, D. R. Selviah. GaAs, J. Appl. Phys. 78 of GaAs and AlAs: Extension of
Refractive indices of MBE-grown AlxGa1-
, 3380-3386 (1995) Adachi’s model, J. Appl. Phys. 80
xAs ternary alloys in the transparent , 5909-5914 (1996)
wavelength region, AIP Adv. 11
, 025327 (2021)
λ𝑐
Thickness of the GaAs: 𝑊 𝐺𝑎𝐴𝑠 𝑙𝑎𝑦𝑒𝑟 =
4 ∙ 𝑛𝐺𝑎𝐴𝑠
λ𝑐
Thickness of the AlAs: 𝑊 𝐴𝑙𝐴𝑠 𝑙𝑎𝑦𝑒𝑟 =
4 ∙ 𝑛 𝐴𝑙𝐴𝑠
Theoretical calculation of optical cavity parameters and mode positions – Design
λ𝑐
Thickness of the cavity: 𝑊 𝑐𝑎𝑣 =33 ∙
𝑛𝐺𝑎𝐴𝑠
λ𝑐
Thickness of the GaAs: 𝑊 𝐺𝑎𝐴𝑠 𝑙𝑎𝑦𝑒𝑟 =
4 ∙ 𝑛𝐺𝑎𝐴𝑠
λ𝑐
Thickness of the AlAs: 𝑊 𝐴𝑙𝐴𝑠 𝑙𝑎𝑦𝑒𝑟 = = 𝟕𝟕 .𝟓𝟒𝟐 𝒏𝒎
4 ∙ 𝑛 𝐴𝑙𝐴𝑠
Theoretical calculation of optical cavity parameters and mode positions – Parameters
√
1
2 𝜋 ∙ 𝐸𝑛𝑒𝑟𝑔𝑦 𝑆𝑡𝑜𝑟𝑒𝑑 𝜋𝜆 𝑑 ( 𝑅1 𝑅 2 ) 4
𝑄= 𝑟 𝑒𝑓𝑓 =𝑎=
𝐸𝑛𝑒𝑟𝑔𝑦 𝑙𝑜𝑠𝑡 𝑝𝑒𝑟 𝑐𝑦𝑐𝑙𝑒 8𝑛
1 − ( 𝑅1 𝑅2 )
1
2
( )
Refractive index model (R)
( )
2𝑁 2
𝑛 𝑠 𝑛 𝑙𝑜𝑤
1−
𝑛 0 𝑛 h𝑖𝑔h
𝑅= Ozaki and Adachi (1995)
( )
2𝑁
𝑛𝑠 𝑛𝑙𝑜𝑤
1+
𝑛0 𝑛h𝑖𝑔h
√
𝜋 ( 2 𝑀 +6 ) 1
𝑄= 𝜋𝜆 𝑑 ( 𝑅1 𝑅 2 ) 4
𝑅 𝑡𝑜𝑝 + 𝑅𝑏𝑜𝑡𝑡𝑜𝑚 𝑟 𝑒𝑓𝑓 =𝑎= 1
1− 8𝑛
2 1 − ( 𝑅1 𝑅2 ) 2
Characterization of the Gradient of the cavity Measurements in several points of the cavity by FTIR
Simulations – Transfer Matrix Method – TMM (Matlab codes by Sylvain Perret)
Models of dispersion : Ozaki & Adachi (1995) ; Rakic & Majewski (1996)
2nd Experiment:
CRDS
Optical Characterization
of the Cavity
Storage time – Quality
Factor
Simon Sanchis & Sylvain
Perret
Experiments
Cavity Ring-Down Spectroscopy – CRDS – Bibliography
𝑆𝑒𝑚𝑖𝑐𝑜𝑛𝑑𝑢𝑐𝑡𝑜𝑟 𝑀𝑖𝑐𝑟𝑜𝑐𝑎𝑣𝑖𝑡𝑖𝑒𝑠
Cavity Ring-Down Spectroscopy - CRDS −𝛼𝑑
𝐼 0=𝐼 𝐿𝐴𝑆𝐸𝑅 𝑇 1 𝑇 2 𝑒
− 2𝛼 𝑑
𝐼 1= 𝐼 0 𝑅1 𝑅 2 𝑒
𝑛 𝑛 − 2𝑛 𝛼 𝑑
𝐼 𝑛= 𝐼 0 𝑅1 𝑅 2 𝑒
Ring-Down Time
𝒕 𝟐𝒅
𝑰 (𝒕)=𝑰𝟎 𝒆
−
𝝉 𝝉=
𝒄 ( 𝟐− 𝑹𝟏 − 𝑹𝟐 )
𝑄=𝜔𝜏
Cavity Ring-Down Spectroscopy – CRDS – Experimental Setup
Cavity Ring-Down Spectroscopy – CRDS – Treatment of experimental data
6th
Mode τ (ps)
5th
3rd 931 nm 79.09 ± 1.41 ps
4th 920 nm 112.39 ± 1.51 ps
106.40 ± 1.60 ps ; 120.34 ± 1.88 ps ; 122.13 ±
5th 909 nm
1.92 ps
6th 899 nm 114.98 ± 1.52 ps ; 132.33 ± 2.39 ps
⃑
[ ⃑𝑓 𝑞]
Carrier-induced change in refractive index
^
E field operator𝐸 𝑞=𝐸 𝜔 ( ⃗
𝑟 ) ^
𝑎 + ⃗
𝑓
∗
( ⃗
𝑟 ) ^
𝑎
∗
𝑞 𝑞 𝑞
3 Effects
𝐸Field
Vacuum Electric 𝜔=
√ ❑
ℏ𝜔
2 𝜖 0 𝑉 𝑐𝑎
2
Volume of the mode 𝑐𝑎𝑣 ∫ | 𝑞 | 𝑟⃗
𝑉 = ⃑
𝑓 ( ⃗
𝑟 ) 𝑑3
𝑐 𝑎𝑣
• Bandfilling (Burnstein-Moss effect) 𝑉𝑜𝑙
• Bandgap Shrinkage
Shape of the mode
• Free-carrier absorption
Cavity
Gradient Side (x) - Lambda (nm) Not Gradient Side (y for x=0.5) - Lambda (nm)
Position
x, y (mm) 1st Mode 5th Mode 9th Mode 1st Mode 5th Mode 9th Mode
0.5 985.0493155 938.1075126 897.579372 985.0493155 938.107513
• High storage times and Quality Factors allowing Colour Change experiments.
• Try other fitting profiles for the ring-down times.
• Thickness gradient negligible.
• Ring-Down experiments with masks to improve Q.
Future Works
936 935.843352550253
935.681969932421
935.017324468496
935
934.272002642869
934
933
932
0.5 3 5.5 6.5 9.5 12.5 13.5 17.25 21
Series1 Series2
Cavity Ring Down Spectroscopy – CRDS – Laboratory Notebook
Cavity Ring Down Spectroscopy – CRDS – Experimental Setup