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Stick Diagram
Stick Diagram
Introduction
MOS design is aimed at turning specification into
masks for processing silicon to meet the specification. MOS circuits are formed on four basic layers:
n-diffusion p-diffusion polysilicon metal
Stick Diagrams.
Stick Diagram
Stick diagrams are a means of capturing topography
and layer information using simple diagrams. Stick diagrams convey layer information through color codes (or monochrome encoding). Acts as an interface between symbolic circuit and the actual layout.
definition
Rule 2. When two or more sticks of different type cross or touch each other there is no electrical contact. (If electrical contact is needed we have to show the connection explicitly)
Now draw a yellow well around the active that represents a p-type transistor and two horizontals blue lines to represent VDD and GND.
VDD
Now create your gates by placing poly We will share diffusion regions so some of the drains are oriented up and some are oriented down. Notice that the gates of the n-type and p-type transistors are connected with poly.
PMOSs
NMOSs GND
Notice that Poly and Metal 1 can overlap Avoid routing signals that are side by side for long lengths. This adds capacitance to the device. Avoid all interconnect overlap if possible. This adds capacitance to the device. Strive for simplicity. This will later provide the smallest and fastest devices. You can use Poly, Metal 2 (M2), and even Active to interconnect your device. But keep in mind, Poly and especially Active adds resistance to you device.
Make VDD and GND horizontal and have them stretch from the left to the right of the cells. This allows the cells to be abutted top to bottom or side by side by overlaying the power lines. It will be helpful to make all of your cells the same height (distance between power and ground) so they will line up better when they are abutted.
Keep your inputs and outputs inside the cell, and try to keep them on M1. M2 should be reserved for your select lines and clock. Data should flow in metal1 horizontally, and control should flow in M2 vertically. Clearly there will be times that this rule must be broken, but it will save a lot of confusion and hassle if you do all you can to follow this advice.
Use minimum Active. Fully use as much contact area as you have (unless you have a really good reason not to). Some of the Active contacts below are minimum size while they could clearly be larger!
Try to use shared Active regions. An example: Three transistors in series do not need the M1 and contacts between each of the gates and can all be on one piece of active as shown in the stick diagrams.
Where possible avoid crossing nets. In other words, don't take a M1 line, change to M2, cross M1, change back to M1 and so on. It is a big space waste to do this. Plan ahead and route the signals in a way where this is avoid as often as possible.
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