UNIT-V (LEAKAGE POWER

MINIMIZATION APPROACHES)

LECTURE-1
MINIMIZING
LEAKAGE POWER-I

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AGENDA
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Why Leakage Power is an Issue?
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Leakage Power Limits Vt Scaling
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Key Parameter Vt
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Threshold Voltage(Vt) Scaling
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Fabrication of Multiple Threshold Voltages:
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Multiple Channel Doping

Multiple Oxide thickness
Multiple channel length
Multiple Body bias

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Multiple Channel Doping
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Multiple Oxide Thickness
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Multiple channel length
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Multiple Body bias
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Leakage Reduction Approaches
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Transistor Stacking
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Transistor Stacking : 3 I/P Nand Gate
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Transistor Stacking
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Transistor Stacking
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VTCMOS:
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VTCMOS Approach:
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 MTCMOS
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MTCMOS
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Simulation Results
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Advantages & Limitations of MTCMOS
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References
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Title : Low-Power VLSI Circuits & Systems

Author : Ajit Pal
Edition : Illustrated
Publisher : Springer, 2014
ISBN : 8132219376, 9788132219378

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