21MT504 Power Electronics and Electrical Drives

Module 1

Topic: Power Diode/ Thyristor/TRIAC

Definition of Power Electronics
• Power Electronics is defined as the application of solid-state
(devices) electronics for the control and conversion of electric
power.

Power Scale:
Milliwatt(mW) Megawatt(MW) Gigawatt(GW)

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 WHY POWER ELECTRONICS?

• Without this technology, electric motors would always run at full speed
and renewables, such as solar and wind power, could not be fed into the
electricity grid.
• Power-electronics technologies are able to vary the speed of motor
drives, making processes more efficient and reducing the amount of
energy consumed.
• The primary task of power electronics is to process and control the flow
of electric energy by supplying voltages and currents in a form that is

optimally suited for user loads.

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General structure of a Power Electronic
System

Control is invariably required

Power converter along with its controller including the
corresponding measurement and interface circuits, is also
called Power Electronic System
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The Evolution of Semiconductor Devices

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Applications

• Industrial
• Transportation
• Utility Systems
• Power Supplies for all kinds of electronic equipment's
• Residential and home appliances
• Space technology

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ACTUATORS-DRIVES&POWER ELECTRONICS

Robotic arm using Electrical drives

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POWER ELECTRONIC SWITCHING DEVICES
1. Uncontrolled turn on and off
Power Diode

2. Controlled turn on uncontrolled turn off

Thyristors

3. Controlled turn on and off characteristic

Power Transistor, BJT, MOSFET, GTO, IGBT
4. Continuous gate signal requirement
BJT, MOSFET, IGBT

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POWER ELECTRONIC SWITCHING DEVICES

5.Pulse gate requirement

SCR(Silicon-Controlled Rectifier) , GTO

6. Bidirectional current capability

TRIAC

7. Undirectional current capability

SCR, GTO, BJT, MOSFET, IGBT

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Power Diode

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Power Diode

• A low-power diode, called signal diode, is a pn-junction device.

• A high-power diode, called power diode, is also a pn-junction

device but with constructional features somewhat different from
a signal diode.

• It is a uncontrolled and unidirectional device

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Power Diode- Structure

• It consists of heavily doped n+ substrate.

• On this substrate, a lightly doped n - layer is epitaxially grown.
• A heavily doped p+ layer is diffused into n-layer to form the
anode of power diode

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Formation of depletion region
• The N– layer is the key feature of the power
diode which makes it suitable for high
power applications.
• This layer is very lightly doped.
• The thickness of depletion region increases
with decrease in doping concentration.
• This increased thickness of depletion region
or the space charge region helps the diode
to block larger reverse biased voltage and
hence have a greater breakdown voltage.
• Adding N– layer significantly increases the
ohmic resistance of the diode leading to
more heat generation during forward
conduction state.

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Modes of Operation

• Forward Biased condition

• Reverse Biased condition

Video link: Power diode

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DIODE IN REVERSE BIAS CONDITION
• When cathode is positive with respect to anode,
the diode is said to be reverse biased.
• In the reverse biased condition, a small reverse
current called leakage current, of the order of
microamperes or milliamperes (for large diodes)
flows.
• The leakage cur-rent is almost independent of the
magnitude of reverse voltage until this voltage
reaches breakdown voltage. At this reverse
breakdown, voltage remains almost constant but
reverse current becomes quite high-limited only
by the external circuit resistance.
• A large reverse breakdown voltage, associated
with high reverse current, leads to excessive
power loss that may destroy the diode.

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Diode in Forward Bias
• When anode is positive with respect to cathode,
diode is said to be forward biased.
• With increase of the source voltage Vs from zero
value, initially diode current is zero.
• From Vs =0 to cut-in voltage, the forward-diode
current is very small.
• Cut-in voltage is also known as threshold voltage
or tum-on voltage.
• Beyond cut-in voltage, the diode current rises
rapidly and the diode is said to conduct.
• For silicon diode, the cut-in voltage is around 0.7
V.
• When diode conducts, there is a forward voltage
drop of the order of 0.8 V to 1 V.
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VI characteristics
• For low-power diodes, current in the
forward direction increases first
exponentially with voltage and then
becomes almost linear
• For power diodes, the forward current
grows almost linearly with voltage.
• The high magnitude of current in a
power diode leads to ohmic drops
that hide the exponential part of i-v
curve

Video link: Characteristics

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Turn-Off Characteristics of Power Diode:
switching characteristics
• Reverse recovery time: The
reverse recovery time trr is
defined as the time between the
instant forward diode current
becomes zero and the instant
reverse recovery current decays
to 25% of its reverse peak value

• Time ta is the time between

zero crossing of forward
current and peak reverse
current IRM

• Time tb is measured from the

instant of reverse peak value
IRM to the instant when
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0.25Irm is reached 19
Turn-Off Characteristics of Power Diode:
switching characteristics

Peak Inverse Current IRM=ta

Storage charge Qr = (1/2) IRM. Trr

So, Peak Inverse Current IRM= trr. (di/dt)

Reverse recovery time= trr=

Therfore, Peak Inverse Current IRM=

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 Reverse-Recovery Characteristics for Power
Diode

• The ratio ta/tb is called softness factor or S factor.

• A diode with S factor=1 , is called soft recovery.
• A diode with S factor less than 1 is called abrupt recovery

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Applications of Power Diode

• As a rectifier Diode
• For Voltage Clamping
• As a Voltage Multiplier
• As a freewheeling Diode

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 THYRISTOR

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Thyristors

• Thyristors are high-speed

solid-state devices which can
be used to control motors,
heaters and lamps

Thyristor 24
 Thyristors
• A thyristor, also known as a
SCR (silicon controlled
rectifier), is a special type of
diode that only allows current
to flow when a control voltage
is applied to it's gate
terminal.
• It will not turn off even after
the gate voltage has been
removed.
• The thyristor will only turn off
when the forward current
drops to zero.

Thyristor 25
SCR-Structure of Silicon Controlled Rectifier

• Most important type of power semiconductor

device.

• Have the highest power handling capability.

• They have a rating of 1200V / 1500A with

switching frequencies ranging from 1KHz to

20KHz.

Thyristor 26
Construction
Gate Cathode
It is a 4 layer, 3 junction PNPN
semiconductor switching device.
+ 19
n 10 cm
-3 + 19
n 10 cm
-3
 10 m
Basically thyristor consist of alternate
p type and n type silicon semiconductor

J3 17 -3
p
-
10 cm 30-100 m forming 3 junction J1,J2,J3 .


J2 Gate terminal is usually kept near the
n
– 13
10 -5 x 10 cm
14 -3 50-1000 m cathode terminal. The terminal
connected to outer P region is called
J1
p 17
10 cm
-3
 30-50m anode.
p
+ 19
10 cm
-3 The terminal connected to outer n
region is called cathode (K) and the
Anode connected to inner P region is called
gate(G)

Thyristor 27
Different types of Thyristors

Thyristor 28
Circuit Diagram of Thyristor

• From the circuit the anode and

cathode are connected to the
supply voltage through the load.
• Another supply Es is applied
between the gate and the cathode
terminal which supplies for the
positive gate current when the
switch S is closed.

Thyristor 29
VI Characteristics of SCR

Operating modes of SCR are:

• Reverse Blocking

• Forward Blocking

• Forward Conducting

Thyristor 30
VI Characteristics of SCR

Reverse Blocking Mode.

• When Cathode is made positive with respect to anode
• Thyristor is reverse biased
• Junctions J 1, J3 are reverse biased whereas junction J2 is
forward biased.
• The device behaves as two diodes connected in series with
reverse voltage applied across them

Thyristor 31
VI Characteristics of SCR

Forward Blocking Mode:

• Anode is positive with respect to the cathode, with gate circuit
open.
• Thyristor is said to be forward biased
• Junctions J1 and J3 are forward biased but junction J2 is
reverse biased.
• In this mode, a small current, called forward leakage current,
flows

Thyristor 32
VI Characteristics of SCR

Forward Conduction mode.

• When anode to cathode forward voltage is increased with gate

circuit open, reverse biased junction J2 will have an avalanche
breakdown at a voltage called forward breakover voltage VBO’

• After this breakdown, thyristor gets turned on

Thyristor 33
VI Characteristics of SCR

Thyristor 34
VI Characteristics of SCR
• The latching current is
the smallest amount of
anode current is
required for preserving
the thyristor in the ON
condition instantly once
a thyristor is turned ON
then the gate signal has
been detached.

Thyristor 35
VI Characteristics of SCR

• Holding current of SCR or

thyrsistor is that minimum value of
current below which anode current
must fall to come in OFF state.
• This means if the value of holding
current is 5 mA, then anode
current of SCR must become less
than 5 mA to stop conducting.

Thyristor 36
Effects of gate current
• Higher the gate current lower
the forward breakover voltage.

• The typical gate current

magnitudes are:20 to 200 mA.

• Once a Thyristor starts to

conduct it continues to conduct
even with no Gate signal, until
the Anode current decreases
below the devices holding
current, (IH) and below this
value it automatically
turns-“OFF”.

Thyristor 37
Two transistor model of SCR

• The collector of each

transistor is connected
to the base of the other
transistor.
• When there is no gate
voltage, the transistor 2
is in cut-off mode due
to zero base current.
• Therefore, no current
flows through the
collector and hence the
base of transistor T1.
Thyristor 38
Two transistor model of SCR
• When a particular voltage is
applied between the gate and
cathode, a small base current
flows through the base of the
transistor 2 and thereby
collector current will increase.

• Hence the base current at the

transistor T1 drives the
transistor into saturation mode
and thus load current will flow
from anode to cathode.

Thyristor 39
Two transistor Model
From the above figure the base
current of transistor T2 becomes
the collector current of transistor
T1 and vice-versa.

Hence
• Ib2 = Ic1 and Ic2 = Ib1
• Also current through the cathode
terminal, Ik = Ig + Ia ……(1)
For a transistor,
• Ib1 = Ie1 – Ic1 ……(2)
• and Ic1 = α1Ie1 + Ico1……(3)
Where Ico1 is the leakage current.

Thyristor 40
Two Transistor Model of SCR

In the off-state of a transistor, collector current IC is

related to emitter current IE as
IC = αiE+lcBO

For transistor Q1, emitter current Ie = anode current Ia

and Ic = collector current lC1.
IC1 = α1Ia + lcBO1

Similarly for Q2,

IC2 = α2IK + lcBO2
Thyristors 41
Two Transistor Model of SCR

Therefore, Ia = Ic1 + Ic2

IK = I a + I g
Ia= α1Ia + lcBO1 + α2IK + lcBO2

Ia =

Thyristors 42
SCR TURN OFF METHODS
• To turn OFF the SCR, anode current must be
reduced to a level below the holding current level
of the SCR.

• The process of turning OFF the SCR is called as

commutation. Two major types of commutating the
SCR are,

• Natural Commutation and

• Forced Commutation
Thyristor 43
Turn-on Characteristics
• The total switching period being much
smaller compared to the cycle time.

• As shown in Figure there is a transition

time “tON” from forward off state to
forward on state.

• This transition time is called the

thyristor turn ON time.

• It can be divided into three separate

ton  td  tr
intervals namely, (i) delay time (td) (ii)
rise time (tr) and (iii) spread time (tp).
Thyristor 44
Turn-on Characteristics
• Delay time (td):It is measured from the instant of application of the
gate current to the instant when the anode current rises to 10% of its
final value (or VAK falls to 90% of its initial value). Typical value of
“td” is a few micro seconds.

• Rise time (tr): For a resistive load, “rise time” is the time taken by
the anode current to rise from 10% of its final value to 90% of its final
value. At the same time the voltage VAK falls from 90% of its initial
value to 10% of its initial value. Usual values of maximum allowable
diA/dt are in the range of 20-200 A/μs.

• Spread time (tp): It is the time taken by the anode current to rise
from 90% of its final value to 100%. During this time conduction
spreads over the entire cross section of the cathode of the thyristor.
The spreading interval depends on the area of the cathode and on
the gate structure of the thyristor.

Thyristor 45
 Turn-off Characteristics
VAK
tC
tq

IA
di
C om m utation
Anode current dt
begins to
decrease Recovery Recom bination

t1 t2 t3 t4 t5

t q = device off tim e

t rr t gr
t c = circuit off tim e
tq
t c Thyristor 46
Turn off Characteristics
• The turn off time tq of a thyristor is defined as the time
between the instant anodes current becomes zero and
the instant the thyristor regains forward blocking
capability.
• During turn off time, excess minority carriers from all the
four layers of the thyristor must be removed.
• Accordingly tq is divided in to two intervals, the reverse
recovery time (trr) and the gate recovery time (tqr).
• The time interval tq = trr + tgr is called “device turn off
time” of the thyristor. No forward voltage should appear
across the device before the time t.

Thyristor 47
APPLICATIONS
• SCRs are mainly used in devices where the control
of high power,
• Medium- to high-voltage AC power control
applications, such as lamp dimming,
• power regulators and motor control.
• SCRs and similar devices are used for rectification of
high-power AC in high-voltage dc power
transmission.
• They are also used in the control of welding
machines, mainly GTAW (gas tungsten arc welding)
processes similar.
• It is used as switch in various devices.
Thyristor 48
 TRIAC

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Bidirectional Triode Thyristors
(TRIAC)

TRIAC 50
TRIAC
• Bidirectional Thyristor with three terminals

• Used to control the power in ac circuits

• Equivalent to two SCRs connected in parallel

TRIAC 51
Construction of TRIAC
Three terminals are,
• MTl (main terminal 1),MT2 and the
gate(G).
• The gate G is near terminal MTl.
• Gate is connected to N4 as well
as P2.
• Terminal MTI is connected to P2
and N2
• Terminal MT2 to P1 and N 3.
TRIAC 52
Working and Operation of TRIAC

• Mode 1: MT2 positive, gate polarity positive.

• Mode 2: MT2 positive, gate polarity negative.
• Mode 3: MT2 negative, gate polarity positive.
• Mode 4: MT2 negative, gate polarity negative.

• Modes 2 and 3 - less sensitive configurations (need more gate

current to trigger the triac),
• Modes 1 and 4 - greater sensitivity.

TRIAC 53
Mode-I Operation
M T 2 (+ )

P1

N1
MT2 Positive,
P2 Gate Positive
Ig
N2

M T 1 ( )
G
V
(+ )
Ig

TRIAC 54
Mode-I Operation
1. Terminal MT2 and gate are positive with respect to terminal MT1:

• Current flows through path P1-N1-P2-N2.

• Two junctions P1-N1 and P2-N2 are forward biased whereas junction N1 P2 is
blocked.

• The triac is now said to be positively biased.

• A positive gate with respect to terminal MT1 forward biases the junction P2-N2
and the break­down occurs as in a normal SCR.

TRIAC 55
 Mode-II Operation
M T 2 (+ )

P1
In itial F in al
con d u ctio n N1 con d u ctio n
P2
N3 N2 MT2 Positive,
M T 1 ( ) Gate Negative
G
V

Ig
TRIAC 56
Mode-II Operation
2. Terminal MT2 is positive but gate is negative with respect
to terminal MT1:

• Path of current remains the same as in mode 1

• Junction P2-N3 is forward biased and current carriers injected into P2

turn on the triac.

TRIAC 57
Mode-III Operation
M T 2 ( )

N4

P1
N1

P2
N2
MT2 Negative,
G M T 1 (+ )
(+ )
Gate Positive
Ig
TRIAC 58
Mode-III Operation

3.Terminal MT2 is negative but gate is positive with respect to

terminal MT1:

• Current flow path is P2-N1-P1-N4

• Junction P2-N2 is forward biased, current carriers are injected

and therefore, the triac is turned on.

TRIAC 59
Mode-IV Operation
M T 2 ( )

N4

P1
N1

P2
MT2 Negative,
N3
Gate Negative
G M T 1 (+ )
(-)

Ig
TRIAC 60
Mode-IV Operation

4.Terminal MT2 and gate are negative with respect to terminal MT1:

• The current flow path is P2-N1-P1-N4.

• The two junctions P2-N1 and P1 - N4 are forward biased whereas junction N1-P1 is
blocked.

• The triac is now said to be negatively biased.

• A negative gate with respect to terminal MT1 injects current carriers by forward

biasing junc­tion P2-N3 and thus initiates the conduction.

TRIAC 61
Four Quadrants

• Quadrant I operation : VMT2, positive; VG1 positive

• Quadrant II operation : VMT21 positive; VGl negative

• Quadrant III operation : VMT21 negative; VGl negative

• Quadrant IV operation : VMT21 negative; VG1 positive

TRIAC 62
VI Characteristics:

TRIAC 63
Advantages of TRIAC

• TRIACs are triggered with positive and negative voltages

• Need single fuse for protection, which made circuit simpler

• In some dc applications SCR is required to be connected in

parallel with a diode to protect against reverse voltage, whereas
TRIAC may used without diode.

TRIAC 64
Disadvantages of TRIAC

• It have low dv/dt rating compared to SCR

• SCRS are available in high rating compare to TRIAC

• Reliability of TRIAC is less.

TRIAC 65
Applications of TRIAC

• Motor speed regulation

• Temperature control

• Illumination control

• Liquid level control

• Phase control circuits

• Power switches
TRIAC 66
 Thank You

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