Common emitter configuration

C
IC
N

RE RE

IB
JC + +
P
B B
JE
- -
RB RB VBE VCE VCC
N
+ + IE
VBB
E
- E
-
N-P-N Transistor
 Common emitter configuration

• Emitter acts as a common terminal

between input and the output. The
input voltage is applied between C
base and emitter. Hence VBE is the IC

input voltage and IB is the input RE

current.
IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Common emitter configuration

Emitter acts as a common terminal

between input and the output. The
input voltage is applied between C
base and emitter. Hence VBE is the IC

input voltage and IB is the input RE

current.
IB
The output is taken between the +
B
collector and emitter. Therefore VCE
is the output voltage and IC is the VBE VCE -
RB VCC
output current.
+ IE
VBB
E
-
N-P-N Transistor
Characteristics of a transistor in CE configuration

• Input characteristics

• Output characteristics

• Transfer characteristics
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB)
C
versus input voltage (VBE) at a IC
constant output voltage (VCE).
RE

IB
+
B

VBE VCE -
RB constant VCC

VBB + IE

E
-
N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB) C
versus input voltage (VBE) at a IC
constant output voltage (VCE).
N

IB
(μA)
VCE
constant
IB JC +
P
B VCC
JE
-
RB VBE
N

VBB +

0 0.7 1 2 IE
VBE
- E

N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB) C
versus input voltage (VBE) at a IC
constant output voltage (VCE).
N

IB
(μA)
VCE
VCE = 4V
constant
IB JC +
P
B VCC
JE
-
RB VBE
N

VBB +

0 0.7 1 2 IE
VBE
- E

N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB) C
versus input voltage (VBE) at a IC
constant output voltage (VCE).
N

IB
(μA)
VCE
constant
VCE = 4V 10V IB JC +
P
B VCC
JE
-
RB VBE
N

VBB +

0 0.7 1 2 IE
VBE
- E

N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB) C
versus input voltage (VBE) at a IC
constant output voltage (VCE).
N

IB
(μA)
VCE
constant
VCE = 4V 10V IB JC +
P
B VCC
JE
-
RB VBE
N

VBB +

0 0.7 1 2 IE
VBE
- E
At constant VBE , IB decreases as
VCE increases N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB) C
versus input voltage (VBE) at a IC
constant output voltage (VCE).
N

IB
(μA)
VCE
constant
VCE = 4V 10V IB JC +
P
B VCC
ΔIB JE
-
Ri=ΔVBE/ΔIB RB VBE
ΔVBE
N
VCE Constant VBB +

0 0.7 1 2 IE
VBE
- E
The value of dynamic input resistance “Ri” is low
for CE N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB)
versus input voltage (VBE) at a
constant output voltage (VCE).

IB
(μA)
VCE = 4V 10V

ΔIB

ΔVBE

0 0.7 1 2
VBE
 Characteristics of a transistor in CE configuration
• Input characteristics:
• It is a graph of input current (IB)
versus input voltage (VBE) at a
constant output voltage (VCE).

IB
(μA) VBE
VCE = 4V 10V
2 VCE = 10V

ΔIB
1
VCE = 4V
ΔVBE
0.7

0 0.7 1 2
VBE IB
(μA)
Transistor as a current operated device
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB).
RE

Constant IB
+
B

VBE VCE -
RB VCC

VBB + IE

E
-
N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB).
RE
IC
(mA)

IB = 0 +
4
B
3
VBE VCE -
RB VCC
2
VBB + IE
1

1 2 3 4 E
VCE -
N-P-N Transistor
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB).
RE
IC
(mA)

IB = 0 +
4
B
3
VBE VCE -
RB VCC
2
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
N-P-N Transistor
Cutoff region
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB).
RE
IC
(mA)

IB = 2μA
4 +
B
3
VBE VCE -
RB VCC
2
IB = 2μA
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
N-P-N Transistor
Cutoff region
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB).
RE
IC
(mA)

IB = 3μA
4 +
B
3
IB = 3μA VBE VCE -
RB VCC
2
IB = 2μA
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
N-P-N Transistor
Cutoff region
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB).
RE
IC
(mA)

IB = 4μA
+
4 B
IB = 4μA
3
IB = 3μA VBE VCE -
RB VCC
2
IB = 2μA
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
N-P-N Transistor
Cutoff region
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB)
RE
Saturation
region
IC IB = 4μA
+
(mA)
4 B
IB = 4μA
3
IB = 3μA VBE VCE -
RB VCC
2
IB = 2μA
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
N-P-N Transistor
Cutoff region
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB)
RE
Saturation Active
region region
IC IB = 4μA
+
(mA)
4 B
IB = 4μA
3
IB = 3μA VBE VCE -
RB VCC
2
IB = 2μA
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
N-P-N Transistor
Cutoff region
 Characteristics of a transistor in CE configuration
• Output characteristics:
• It is a graph of output current (Ic)
C
versus output voltage (VCE) at a IC
constant input current (IB)
RE

IC IB = 4μA
+
(mA)
4 B
IB = 4μA
3
IB = 3μA VBE VCE -
RB VCC
2
IB = 2μA
VBB + IE
1 IB = 0

1 2 3 4 E
VCE -
Ro=ΔVCE/ΔIc
Ro is large in active region
IB Constant And Ro very small in saturation region
 Characteristics of a transistor in CE configuration
Transfer characteristics

IC (mA)
VCE constant
4

Slope = ΔIC / ΔIB = βac

2

0 1 2 3 4
IB (μA)

β ac = ΔIC / ΔIB

β dc = IC / IB VCE constant
 Relation between αdc and βdc
We know that

αdc = IC /IE
 Relation between αdc and βdc
We know that

αdc = IC /IE but I E = I C + IB

 Relation between αdc and βdc
We know that

αdc = IC /IE but I E = I C + IB

therefore αdc = IC / (IC + IB)

 Relation between αdc and βdc
We know that

αdc = IC /IE but I E = I C + IB

therefore αdc = IC / (IC + IB)

divide numerator and denominator by IB to get
 Relation between αdc and βdc
We know that

αdc = IC /IE but I E = I C + IB

therefore αdc = IC / (IC + IB)

divide numerator and denominator by IB to get

αdc = (IC /IB)

(IC / IB) + (IB / IB)
 Relation between αdc and βdc
We know that

αdc = IC /IE but I E = I C + IB

therefore αdc = IC / (IC + IB)

divide numerator and denominator by IB to get

αdc = (IC /IB)

(IC / IB) + (IB / IB)

αdc = (IC /IB)

(IC / IB) + 1
 Relation between αdc and βdc
We know that

αdc = IC /IE but I E = I C + IB

therefore αdc = IC / (IC + IB)

divide numerator and denominator by IB to get

αdc = (IC /IB)

(IC / IB) + (IB / IB)

αdc = (IC /IB)

(IC / IB) + 1 since βdc = IC /IB
 Relation between αdc and βdc
We know that

αdc = IC /IE but IE = IC + IB

therefore αdc = IC / (IC + IB)

divide numerator and denominator by IB to get

αdc = (IC /IB)

(IC / IB) + (IB / IB)

αdc = (IC /IB)

(IC / IB) + 1 since βdc = IC /IB

αdc = βdc
βdc + 1
this is the relation between αdc and βdc similarly we can obtain the expression for βdc in
terms of αdc
 Relation between αdc and βdc
The expression for βdc in terms of αdc
We know that
βdc = IC /IB
 Relation between αdc and βdc
The expression for βdc in terms of αdc
We know that
βdc = IC /IB but I E = I C + IB
IE - I C = IB
 Relation between αdc and βdc
The expression for βdc in terms of αdc
We know that
βdc = IC /IB but I E = I C + IB
IE - I C = IB

therefore βdc = IC / (IE - IC)

 Relation between αdc and βdc
The expression for βdc in terms of αdc
We know that
βdc = IC /IB but I E = I C + IB
IE - I C = IB

therefore βdc = IC / (IE - IC)

divide numerator and denominator by IE to get

βdc = (IC /IE)

(IE / IE) - (IC / IE)
 Relation between αdc and βdc
The expression for βdc in terms of αdc
We know that
βdc = IC /IB but I E = IC + IB
IE - I C = IB

therefore βdc = IC / (IE - IC)

divide numerator and denominator by IE to get

βdc = (IC /IE)

(IE / IE) - (IC / IE)

βdc = (IC /IE)

1 - (IC / IE) since αdc = IC /IE
 Relation between αdc and βdc
The expression for βdc in terms of αdc
We know that
βdc = IC /IB but I E = IC + IB
IE - I C = IB

therefore βdc = IC / (IE - IC)

divide numerator and denominator by IE to get

βdc = (IC /IE)

(IE / IE) - (IC / IE)

βdc = (IC /IE)

1 - (IC / IE) since αdc = IC /IE

βdc = αdc
1- αdc
 Relation between αdc and βdc
The expression for βdc in terms of αdc

βdc = αdc
1- αdc

The expression αdc for in terms of βdc

αdc = βdc
βdc + 1
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

rearranging IC - ICBO = αdcIE IB

+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

rearranging IC - ICBO = αdcIE IB

+
IC /αdc– ICBO /αdc= IE B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

rearranging IC - ICBO = αdcIE IB

+
IC /αdc– ICBO /αdc= IE B

VBE VCE -
RB VCC
IC /αdc– ICBO /αdc= IC + IB
+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

rearranging IC - ICBO = αdcIE IB

+
IC /αdc– ICBO /αdc= IE B

VBE VCE -
RB VCC
IC /αdc– ICBO /αdc= IC + IB
+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

rearranging IC - ICBO = αdcIE IB

+
IC /αdc– ICBO /αdc= IE B

VBE VCE -
RB VCC
IC /αdc– ICBO /αdc= IC + IB
IC /αdc– IC= IB+ ICBO /αdc + IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Current relation in CB configuration

IE = IC + IB C
since IC

IC = αdcIE + ICBO RE

rearranging IC - ICBO = αdcIE IB

+
IC /αdc– ICBO /αdc= IE B

VBE VCE -
RB VCC
IC /αdc– ICBO /αdc= IC + IB
IC /αdc– IC= IB+ ICBO /αdc + IE
VBB
IC (1/αdc– 1)= IB+ ICBO /αdc -
E

N-P-N Transistor
 Current relation in Common emitter configuration

IC (1/αdc– 1)= IB+ ICBO /αdc

IC 1- αdc = IB+ ICBO /αdc C
IC
αdc
RE

IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC (1/αdc– 1)= IB+ ICBO /αdc

IC 1- αdc = IB+ ICBO /αdc C
IC
αdc
RE
IC == IB αdc + ICBO
IB
1- αdc 1- αdc +
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC (1/αdc– 1)= IB+ ICBO /αdc

IC 1- αdc = IB+ ICBO /αdc C
αdc IC

RE
IC == IB αdc + ICBO
1- αdc 1- αdc IB
+
Let B
βdc = αdc
1- αdc VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC (1/αdc– 1)= IB+ ICBO /αdc

IC 1- αdc = IB+ ICBO /αdc C
IC
αdc
RE
IC == IB αdc + ICBO
IB
1- αdc 1- αdc +
B
Let
βdc = αdc -
RB VBE VCE VCC
1- αdc
substitute + IE
VBB
IC == IB βdc + ICBO ----(1) E
-
1- αdc
N-P-N Transistor
 Current relation in Common emitter configuration

Let
βdc = αdc
C
1- αdc IC
substitute
IC == IB βdc + ICBO ----(1) RE

1- αdc
IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Let
βdc = αdc
C
1- αdc IC
substitute
IC == IB βdc + ICBO ----(1) RE

1- αdc
IB
+
since B
βdc = αdc
VBE VCE -
1- αdc RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Let
βdc = αdc
C
1- αdc IC
substitute
IC == IB βdc + ICBO ----(1) RE

1- αdc
IB
+
since B
1 + βdc = αdc +1
VBE VCE -
1- αdc RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Let
βdc = αdc
C
1- αdc IC
substitute
IC == IB βdc + ICBO ----(1) RE

1- αdc
IB
+
since B
1 + βdc = αdc +1
VBE VCE -
1- αdc RB VCC

+ IE
1 + βdc = αdc + 1- αdc
VBB
1- αdc
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

Let
βdc = αdc
1- αdc C
IC
substitute
IC == IB βdc + ICBO ----(1) RE
1- αdc
IB
+
since B
1 + βdc = αdc +1
-
1- αdc RB VBE VCE VCC

1 + βdc = αdc + 1- αdc + IE

1- αdc VBB
1 + βdc = 1 E
-
1- αdc N-P-N Transistor
 Current relation in Common emitter configuration

Let
βdc = αdc
1- αdc C
IC
substitute
IC == IB βdc + ICBO ----(1) RE
1- αdc
IB
+
since
B
1 + βdc = αdc +1
1- αdc -
RB VBE VCE VCC

1 + βdc = αdc + 1- αdc

+ IE
1- αdc
VBB
1 + βdc = 1
E
1- αdc -
substitute this in (1) N-P-N Transistor
 Current relation in Common emitter configuration

IC = IB βdc + ICBO (1 + βdc)

C
IC

RE

IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = IB βdc + ICBO (1 + βdc)

C
reverse leakage current IC

ICEO = ICBO (1 + βdc) RE

IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = IB βdc + ICBO (1 + βdc)

C
reverse leakage current IC

ICEO = ICBO (1 + βdc) RE

IB
as the value of βdc is much greater than 1,
+
ICEO >> ICBO B
if we substitute IB = 0 then
VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = IB βdc + ICBO (1 + βdc)

C
reverse leakage current IC

ICEO = ICBO (1 + βdc) RE

IB
as the value of βdc is much greater than 1,
+
ICEO >> ICBO B
if we substitute IB = 0 then
VBE VCE -
RB VCC
IC = ICBO (1 + βdc)
+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current C

IC

ICEO = ICBO (1 + βdc) RE

as the value of βdc is much greater than 1, IB

ICEO >> ICBO +
if we substitute IB = 0 then B

VBE VCE -
IC = ICBO (1 + βdc) RB VCC

IC = ICEO for IB=0 + IE

VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = ICBO (1 + βdc)

C
IC = ICEO for IB=0 IC

The reverse leakage current ICEO increases in RE

the temperature. This current flows in same
direction as that of IC IB
+
B

VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = ICBO (1 + βdc)

C
IC = ICEO for IB=0 IC

the reverse leakage current ICEO increases in RE

the temperature. This current flows in same
direction as that of IC. IB
+
Therefore the collector current IC will increase B
in temperature even when IB is constant.
VBE VCE -
RB VCC

+ IE
VBB
E
-
N-P-N Transistor
 Current relation in Common emitter configuration

IC = ICBO (1 + βdc)

C
IC = ICEO for IB=0 IC

the reverse leakage current ICEO increases in RE

the temperature. This current flows in same
direction as that of IC. IB
+
Therefore the collector current IC will increase B
in temperature even when IB is constant.
VBE VCE -
RB VCC
This is called thermal instability.
So in CE configuration thermal stabilizing
+ IE
circuit must be included.
VBB
E
-
N-P-N Transistor
 Relation between IC and IB

We know that

IC = IB βdc + ICBO (1 + βdc)

 Relation between IC and IB

We know that

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current

ICEO = ICBO (1 + βdc)
 Relation between IC and IB

We know that

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current

ICEO = ICBO (1 + βdc)

therefore IC = IB βdc + ICEO

 Relation between IC and IB

We know that

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current

ICEO = ICBO (1 + βdc)

therefore IC = IB βdc + ICEO

though ICEO is large, it is much smaller as compared to IB βdc.
 Relation between IC and IB

We know that

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current

ICEO = ICBO (1 + βdc)

therefore IC = IB βdc + ICEO

though ICEO is large, it is much smaller as compared to IB βdc.

Therefore IC = IB βdc
 Relation between IC and IB

We know that

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current

ICEO = ICBO (1 + βdc)

therefore IC = IB βdc + ICEO

though ICEO is large, it is much smaller as compared to IB βdc.

Therefore IC = IB βdc

βdc = IC /IB
 Relation between IC and IB
We know that

IC = IB βdc + ICBO (1 + βdc)

reverse leakage current

ICEO = ICBO (1 + βdc)

therefore IC = IB βdc + ICEO

though ICEO is large, it is much smaller as compared to IB βdc.

Therefore IC = IB βdc

βdc = IC /IB
As βdc is the ratio of output current IC and input current IB. It is
called common emitter amplification factor or simply current gain.