Transistor operation in the active region N-P-N

Junction Junction
JEB JCB

+ - - - - +

+ - - - - +
Emitter collector
+ - - - - +
N P N
+ - - - - +

+ - - - - +

RC
RE Depletion Depletion

region region

+ +
- -
Base

VEE VCC
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
N P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
N P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
N P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

Base electron
RE
current

+
-
Base

This constitutes the base current IB

Emitter electron
VEE Thus base current flows due to the
current
Recombination of electrons and holes
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

Base electron
RE
current

+ +
- -
Base

Emitter electron VCC

This constitutes the base current IB
current VEE
Thus base current flows due to the
 Transistor operation in the active region N-P-N
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

Collector electron
Base electron
RE
current
current

+ +
- -
Base

Emitter electron VCC

This constitutes the base current IB

current VEE Thus base current flows due to the

Recombination of electrons and holes

 Transistor operation in the active region N-P-N
Junction Junction
JEB JCB

Emitter collector

N P N

Electron emitted
Electron collected

RC
RE

Collector electron

current

+ +
- -
Base

Emitter electron This constitutes the base current IB

Thus base current flows due to the VCC

current VEE
Recombination of electrons and holes
 Transistor operation in the active region N-P-N
Junction Junction
JEB JCB

Emitter collector

N P N

Electron emitted
Electron collected

RC
RE Direction

Direction Conventional Direction

Conventional Current IB Conventional

Current IE Current IC
+ +
- -
Base

Emitter electron

current VEE VCC

 Transistor operation in the active region N-P-N
Junction Junction
JEB JCB

Emitter collector

N P N

Electron emitted
Electron collected

RC
RE Direction

Direction Conventional Direction

Conventional Current IB Conventional

Current IE Current IC
+ +
- -
Base

Emitter electron

current VEE VCC

IE = IC + IB
 Transistor operation in the active region P-N-P
Junction Junction
JEB JCB

P N P

Emitter collector

N P

holes emitted
holes collected

RC
RE

Collector hole

current

-
+ + -
Base

Emitter Hole This constitutes the base current IB

Thus base current flows due to the VCC

current VEE
Recombination of electrons and holes
 Transistor operation in the active region P-N-P
Junction Junction
JEB JCB

P N P

Emitter collector

N P

holes emitted
holes collected

RC
RE

conventional

current

-
+ + -
Base

Conventional This constitutes the base current IB

Thus base current flows due to the VCC

current VEE
Recombination of electrons and holes
 Transistor operation in the active region P-N-P
Junction Junction
JEB JCB

P N P

Emitter collector

N P

holes emitted
holes collected

RC
RE

conventional

current

-
+ + -
Base

Conventional

current VEE VCC

IE = IC + IB
 Transistor current
• As discussed earlier, the electrons injected from emitter into
base constitute the emitter current (IE).
 Transistor current
• As discussed earlier, the electrons injected from emitter into
base constitute the emitter current (IE).

• Out of these electrons very few will combine with the holes in
the thin base region to constitute the base current (IB).
 Transistor current
• As discussed earlier, the electrons injected from emitter into
base constitute the emitter current (IE).

• Out of these electrons very few will combine with the holes in
the thin base region to constitute the base current (IB).

• The remaining electrons pass through to the collector region

and then to the positive end of Vcc to constitute the collector
current (IC).
 Transistor current C

Collector

• Therefore we can write that IC

IE = IC + IB IB

Base
IE

Emitter
 Transistor current C

Collector

• Therefore we can write that IC

IB
IE = IC + IB

Base
IE

Emitter

• Emitter current is always equal to the sum of collector current

and base current.
 Transistor current C

Collector

• Therefore we can write that IC

IE = IC + IB IB

Base
IE

Emitter

• Emitter current is always equal to the sum of collector current

and base current.
• As IB is very small as compared to IE we can assume the
collector current to be nearly equal to the emitter current

IE ≈ IC
 Circuit symbols and conventions of Transistor

IC C

IC

IB
JC
P
B

B IB JE

N IE

IE E

N-P-N Transistor
 Circuit symbols and conventions of Transistor

IC C

IC

IB
JC
P
B
+
B IB JE

VBE
N
- IE

IE E

N-P-N Transistor
 Circuit symbols and conventions of Transistor

IC C

IC

+
IB
JC VCE
P
B
+
B -
IB JE

VBE
N
- IE

IE E

N-P-N Transistor
 Circuit symbols and conventions of Transistor

IC C

IC
-

IB
JC VCE
N
B -

B +
IB JE

VBE
P + IE

IE E

P-N-P Transistor
 Transistor biasing in different region of operation

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation Forward Forward
region biased biased
3 Active Forward Reverse Amplifier
region biased biased
 Transistor configuration
• Depending on which terminal is made common to input and
output port there are three possible configurations of the
transistor. They are as follows:
 Transistor configuration
• Depending on which terminal is made common to input and
output port there are three possible configurations of the
transistor. They are as follows:

• Common base configuration

 Transistor configuration
• Depending on which terminal is made common to input and
output port there are three possible configurations of the
transistor. They are as follows:

• Common base configuration

• Common emitter configuration

 Transistor configuration
• Depending on which terminal is made common to input and
output port there are three possible configurations of the
transistor. They are as follows:

• Common base configuration

• Common emitter configuration

• Common collector configuration

 Transistor biasing in different region of operation
1. cutoff region (Common emitter)

JC
P

B B
JE

N-P-N Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common emitter)

JC
P

B B
JE
- -

+ +
E

N-P-N Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common emitter)

N
+ +

- -
JC
P

B B
JE
- -

+ +
E

N-P-N Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common emitter)

JC
N

B B
JE

P-N-P Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common emitter)

JC
N

B B
+ JE
+

- -
E

P-N-P Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common emitter)

- -

+ +
JC
N

B B
+ JE
+

- -
E

P-N-P Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common emitter)

JC
P

B B
JE

N-P-N Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common emitter)

JC
P

B B
+ JE
+

- -
E

N-P-N Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common emitter)

- -

+ +
JC
P

B B
+ JE
+

- -
E

N-P-N Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common emitter)

JC
N

B B
JE

P-N-P Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common emitter)

JC
N

B B
JE
- -

+ +
E

P-N-P Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common emitter)

P
+ +

- -
JC
N

B B
JE
- -

+ +
E

P-N-P Transistor
 Transistor biasing in different region of operation
3. Active region (Common emitter)

JC
P

B B
JE

N-P-N Transistor
 Transistor biasing in different region of operation
3. Active region (Common emitter)

JC
P

B B
+ JE
+

- -
E

N-P-N Transistor
 Transistor biasing in different region of operation
3. Active region (Common emitter)

N
+
+

- -
JC
P

B B
+ JE
+

- -
E

N-P-N Transistor
 Transistor biasing in different region of operation
3. Active region (Common emitter)

JC
N

B B
JE

P-N-P Transistor
 Transistor biasing in different region of operation
3. Active region (Common emitter)

JC
N

B B
JE
- -

+ +
E

P-N-P Transistor
 Transistor biasing in different region of operation
3. Active region (Common emitter)

- -

+
JC +
N

B B
JE
- -

+ +
E

P-N-P Transistor
Transistor biasing in different region of operation
1. cutoff region (Common Base)

E C
N P N

JE JC

E C

N-P-N Transistor
Transistor biasing in different region of operation
1. cutoff region (Common Base)

E C
N P N

JE JC
+ -

E C

+ -

N-P-N Transistor
Transistor biasing in different region of operation
1. cutoff region (Common Base)

E C
N P N

JE JC
+ - - +

E C

+ - - +

N-P-N Transistor
Transistor biasing in different region of operation
1. cutoff region (Common Base)

E C
P N P

JE JC

E C

P-N-P Transistor
Transistor biasing in different region of operation
1. cutoff region (Common Base)

E C
P N P

JE JC
- +

E C

- +

P-N-P Transistor
Transistor biasing in different region of operation
1. cutoff region (Common Base)

E C
P N P

JE JC
- + + -

E C

- + + -

P-N-P Transistor
Transistor biasing in different region of operation
2. Saturation region (Common Base)

E C
N P N

JE JC

E C

N-P-N Transistor
Transistor biasing in different region of operation
2. Saturation region (Common Base)

E C
N P N

JE JC
- +

E C

- +

N-P-N Transistor
Transistor biasing in different region of operation
2. Saturation region (Common Base)

E C
N P N

JE JC
- + + -

E C

- + + -

N-P-N Transistor
Transistor biasing in different region of operation
2. Saturation region (Common Base)

E C
P N P

JE JC

E C

P-N-P Transistor
Transistor biasing in different region of operation
2. Saturation region (Common Base)

E C
P N P

JE JC
+ -

E C

+ -

P-N-P Transistor
Transistor biasing in different region of operation
2. Saturation region (Common Base)

E C
P N P

JE JC
+ - - +

E C

+ - - +

P-N-P Transistor
Transistor biasing in different region of operation
3. Active region (Common Base)

E C
N P N

JE JC

E C

N-P-N Transistor
Transistor biasing in different region of operation
3. Active region (Common Base)

E C
N P N

JE JC
- +

E C

- +

N-P-N Transistor
Transistor biasing in different region of operation
3. Active region (Common Base)

E C
N P N

JE JC
- + - +

E C

- +
- +

N-P-N Transistor
Transistor biasing in different region of operation
3. Active region (Common Base)

E C
P N P

JE JC

E C

P-N-P Transistor
Transistor biasing in different region of operation
3. Active region (Common Base)

E C
P N P

JE JC
+ -

E C

+ -

P-N-P Transistor
Transistor biasing in different region of operation
3. Active region (Common Base)

E C
P N P

JE JC
+ - + -

E C

+ - + -

P-N-P Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common collector)

JE
P

B
JC
N
B

N-P-N Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common collector)

JE
P

JC
N
B B

- -

+ +
C

N-P-N Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common collector)

+ +

JE
P - -

JC
N
B B

- -

+ +
C

N-P-N Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common collector)

JE
N

B
JC
P
B

P-N-P Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common collector)

JE
N

JC
P
B B
+ +

- -
C

P-N-P Transistor
 Transistor biasing in different region of operation
1. cutoff region (Common collector)

- -

JE
N
+ +

JC
P
B B
+ +

- -
C

P-N-P Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common collector)

B JE
P

JC
N
B

N-P-N Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common collector)

JE
P

JC
N
B B
+ +

- -
C

N-P-N Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common collector)

- -

JE
P + +

JC
N
B B
+ +

- -
C

N-P-N Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common collector)

JE
N

B
JC
P
B

P-N-P Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common collector)

JE
N

JC
P
B B

- -

+ +
C

P-N-P Transistor
 Transistor biasing in different region of operation
2. Saturation region (Common collector)

+ +

JE
N - -

JC
P
B B

- -

+ +
C

P-N-P Transistor
 Transistor biasing in different region of operation
3. Active region (Common collector)

JE
B P

JC
N
B

N-P-N Transistor
 Transistor biasing in different region of operation
3. Active region (Common collector)

JE
P

JC
N
B B

- -

+ +
C

N-P-N Transistor
 Transistor biasing in different region of operation
3. Active region (Common collector)

- -

JE
P + +

JC
N
B B

- -

+ +
C

N-P-N Transistor
 Transistor biasing in different region of operation
3. Active region (Common collector)

JE
N

B
JC
P
B

P-N-P Transistor
 Transistor biasing in different region of operation
3. Active region (Common collector)

JE
N

JC
P
B B
+ +

- -
C

P-N-P Transistor
 Transistor biasing in different region of operation
3. Active region (Common collector)

+ +

JE
N - -

JC
P
B B
+ +

- -
C

P-N-P Transistor
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
JEB JCB

+ - - - - +

+ - - - - +
Emitter collector
+ - - - - +
N P N
+ - - - - +

+ - - - - +

RC
RE Depletion Depletion

region region

+ +
- -
Base

VEE VCC
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
N P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
N P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
N P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

RE

+
-
Base

VEE
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

Base electron
RE
current

+
-
Base

This constitutes the base current IB

Emitter electron
VEE Thus base current flows due to the
current
Recombination of electrons and holes
 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
Electrons
JEB Holes JCB

- - +

- - +
Emitter collector
- - +
P N
- - +

- - +

Collector electron
Base electron
RE
current
current

(injected collector current)

+ +
- -
Base

Emitter electron VCC

This constitutes the base current IB

current VEE Thus base current flows due to the

Recombination of electrons and holes

 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
JEB JCB

Emitter collector

N P N

Electron emitted
Electron collected

(injected collector current) RC

RE Direction

Direction Conventional Direction

Conventional Current IB Conventional

Current IE Current IC (INJ)

+ +
- -
Base

Emitter electron

current VEE VCC

 Transistor operation in the active region N-P-N
common base configuration
JEB JCB

+ - - - - +

+ - - - - +
Emitter collector
+ - - - - +
N N
+ - - - - +

+ - - - - +
P

RC
Depletion Depletion

region region

IC=ICBO
ICBO is a reverse saturation
VCC
Current flowing due to the +
-
Base
Minority carriers between

Collector and base when the

Emitter is open. ICBO flows due to the reverse ICBO

Biased collector base junction. Is a collector to base leakage current

 Transistor operation in the active region N-P-N
common base configuration
Junction Junction
JEB JCB

Emitter collector

N P N

Electron emitted
Electron collected

IC=IC(INJ)+ICBO RC
RE Direction

Direction Conventional Direction

Conventional Current IB Conventional

Current IE Current IC
+ +
- -
Base

Emitter electron
VEE VCC
current
 Current relations in CB configuration
• The collector current IC of the common base configuration is
given by :
• IC = IC(INJ) + ICBO
 Current relations in CB configuration
• The collector current IC of the common base configuration is
given by :
• IC = IC(INJ) + ICBO

• IC(INJ) : it is called as the injected collector current and it is

due to the number of electrons crossing the collector base
junction
 Current relations in CB configuration
• The collector current IC of the common base configuration is
given by :
• IC = IC(INJ) + ICBO

• IC(INJ) : it is called as the injected collector current and it is

due to the number of electrons crossing the collector base
junction.

• ICBO : this is the reverse saturation current flowing due the

minority carriers between collector and base when the
emitter is open.
• ICBO flows due to the reverse biased collector base
junction.
 Current relations in CB configuration

• As ICBO is negligible as compared to IC(INJ)

• IC = IC(INJ) -------(Practically)

• IC = ICBO -------(with emitter open)

 Current relations in CB configuration

• As ICBO is negligible as compared to IC(INJ)

• IC = IC(INJ) -------(Practically)

• IC = ICBO -------(with emitter open)

• Since ICBO, flows due to thermally generated carriers, it

increases with increase in temperature. It doubles its value
for every 100C rise in temperature
 Current relations in CB configuration
• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

αdc = IC(INJ) / IE
 Current relations in CB configuration
• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

αdc = IC(INJ) / IE

• The value of αdc for CB configuration will always be less

than 1. this is because IC(INJ) < IE
 Current relations in CB configuration
• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

αdc = IC(INJ) / IE

• The value of αdc for CB configuration will always be less

than 1. this is because IC(INJ) < IE

• Typically The value of αdc ranges between 0.95 to 0.995

depending on the thickness of the base region
 Current relations in CB configuration
• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

αdc = IC(INJ) / IE

• The value of αdc for CB configuration will always be less

than 1. this is because IC(INJ) < IE

• Typically The value of αdc ranges between 0.95 to 0.995

depending on the thickness of the base region.

• Larger is the thickness of the base is, smaller is the value of

 Current relations in CB configuration

• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

IC = IC(INJ) + ICBO ------------------------------(1)

 Current relations in CB configuration

• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

IC = IC(INJ) + ICBO ------------------------------(1)

αdc = IC(INJ) / IE
IC(INJ) = αdc IE
 Current relations in CB configuration

• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

IC = IC(INJ) + ICBO ------------------------------(1)

αdc = IC(INJ) / IE
IC(INJ) = αdc IE

IC = αdcIE + ICBO
 Current relations in CB configuration

• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

IC = IC(INJ) + ICBO ------------------------------(1)

αdc = IC(INJ) / IE
IC(INJ) = αdc IE

IC = αdcIE + ICBO

But ICBO is negligibly small

 Current relations in CB configuration

• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current

due to the injection of total emitter current

IC = IC(INJ) + ICBO ------------------------------(1)

αdc = IC(INJ) / IE
IC(INJ)IC== ααdcIE
dc IE+ ICBO

But ICBO is negligibly

IC = αdcIE small
 Current relations in CB configuration

• Current amplification factor ( αdc)

• the current amplification factor is the ratio of collector current
due to the injection of total emitter current

IC = IC(INJ) + ICBO ------------------------------(1)

αdc = IC(INJ) / IE
IC(INJ) = αdc IE
IC = αdcIE + ICBO

But ICBO is negligibly small

IC = αdcIE

Therefore the current amplification factor

αdc= IC / IE
 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
since IC = α dc IE +ICBO
 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
since IC = α dc IE +ICBO

IE = (α dc IE +ICBO) + IB
 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
since IC = α dc IE +ICBO

IE = (α dc IE +ICBO) + IB
therefore IB = IE - α dc IE – ICBO
 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
since IC = α dc IE +ICBO

IE = (α dc IE +ICBO) + IB
therefore IB = IE - α dc IE – ICBO

IB = (1- α dc )IE – ICBO

 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
since IC = α dc IE +ICBO

IE = (α dc IE +ICBO) + IB
therefore IB = IE - α dc IE – ICBO

IB = (1- α dc )IE – ICBO

Neglecting ICBO we get

 Current relations in CB configuration

• Expression for IB

We know that
IE = I C + I B
since IC = α dc IE +ICBO

IE = (α dc IE +ICBO) + IB
therefore IB = IE - α dc IE – ICBO

IB = (1- α dc )IE – ICBO

Neglecting ICBO we get

IB = (1-αdc ) IE
 Characteristics of a transistor in CB configuration
• The characteristics of a transistor help us to understand its
behavior.
 Characteristics of a transistor in CB configuration
• The characteristics of a transistor help us to understand its
behavior.
• The transistor characteristics are of three types :
 Characteristics of a transistor in CB configuration
• The characteristics of a transistor help us to understand its
behavior.
• The transistor characteristics are of three types :

• Input characteristics
 Characteristics of a transistor in CB configuration
• The characteristics of a transistor help us to understand its
behavior.
• The transistor characteristics are of three types :

• Input characteristics

• Output characteristics
 Characteristics of a transistor in CB configuration
• The characteristics of a transistor help us to understand its
behavior.
• The transistor characteristics are of three types :

• Input characteristics

• Output characteristics

• Transfer characteristics
 Characteristics of a transistor in CB configuration
Input characteristics

E C
N P N

JE JC

E C

B
 Characteristics of a transistor in CB configuration
Input characteristics

E IE C
N P N
• Input characteristics is always

- + A graph of input current versus

RE JE JC Input voltage.
VBE VCB =constant
+

-
• For the CB configuration, input
- +
Current is IE and input voltage
B
Is the emitter to base voltage VBE
VEE

• Input characteristics is plotted at

IE
C a constant output voltage VCB
E

- +

RE VBE VCB =constant

+
- + -

B
VEE
 Characteristics of a transistor in CB configuration
Input characteristics

IE
E IE C
N P N

- +
RE JE JC
VBE VCB =constant
+

-
- +

B
VEE

IE VBE
E C

- +

RE VBE VCB =constant

+
- + -

B
VEE
 Characteristics of a transistor in CB configuration
Input characteristics VCB

4V

IE
E IE C
N P N

- +
RE JE JC
VBE
+ VCB =4V

-
- +

B
VEE

IE VBE
E C

- +

RE VBE
VCB =4V
+
- + -

B
VEE
 Characteristics of a transistor in CB configuration
Input characteristics VCB
VCB
4V
8V

IE
E IE C
N P N

- +
RE JE JC
VBE
+ VCB =8V

-
- +

B
VEE

IE VBE
E C

- +

RE VBE
VCB =8V
+
- + -

B
VEE
 Characteristics of a transistor in CB configuration
Input characteristics VCB
VCB
4V
8V

IE
E IE C
N P N

- +
RE JE JC
VBE
+ VCB =8V ΔIE

-
- +

B
VEE

IE VBE
E C
ΔVBE

- +

RE VBE
VCB =8V
+
- + -

B
VEE
 Characteristics of a transistor in CB configuration
Input characteristics VCB
VCB
4V
8V

IE
E IE C
N P N

- +
RE JE JC
VBE
+ VCB =8V ΔIE

-
- +

B
VEE

IE VBE
E C
ΔVBE

- + Input resistance

RE VBE Ri = ΔVBE / ΔIE

VCB =8V
+
- + - at constant VCB

As the change in emitter current is very large for a

B Small change in input voltage, the input resistance

VEE
 Characteristics of a transistor in CB configuration
Input characteristics
Effect of VCB (output voltage) on the input characteristics :

VCB
VCB
4V
8V

IE

ΔIE

VBE
VBE

 As shown in figure the emitter current increases slightly with increase in the output voltage (VCB).

This happens due to a special phenomenon called “Early effect” or “base width modulation”.
 Characteristics of a transistor in CB configuration
Input characteristics
“Early effect” or “base width modulation”.

Larger effective base width Narrow Depletion

At low values of VCB Region for small values of VCB

JE JC

- +

- +
Emitter collector
- +
Emitter Base Collector

N P - + N

- +

Total base width

 Characteristics of a transistor in CB configuration
Input characteristics
“Early effect” or “base width modulation”.

smaller effective base width Wider Depletion

At larger values of VCB Region for larger values of VCB

JE JC

- - +

- - +
Emitter collector
- - +
Emitter Base Collector

N P - - + N

- - +

Total base width

VCB increases

 As VCB is increased, the reverse voltage applied to the CB junction increases.

 This widens the depletion region at the collector junction

 Characteristics of a transistor in CB configuration
Input characteristics
“Early effect” or “base width modulation”.
smaller effective base width

At larger values of VCB Wider Depletion

Region for larger values of VCB

JE JC

- - - - +

- - - - +
Emitter collector
- - - - +
Emitter Base Collector

P - - - - + N
N

- - - - +

Total base width

VCB increases

 As VCB is increased, the reverse voltage applied to the CB junction increases.

 This widens the depletion region at the collector junction
 Due to this, effective width of the base region decreases
 Characteristics of a transistor in CB configuration
Input characteristics
“Early effect” or “base width modulation”.
smaller effective base width

At larger values of VCB Wider Depletion

Region for larger values of VCB

JE JC

- - - - +

- - - - +
Emitter collector
- - - - +
Emitter Base Collector

P - - - - + N
N

- - - - +

Total base width

VCB increases

 This will increase the charge concentration gradient in the base region.
 Due to increase in the charge carrier concentration, more number of electrons diffuse from the emitter to the base i.e. emitter current
increases.
 Characteristics of a transistor in CB configuration
Input characteristics
“Early effect” or “base width modulation”.
smaller effective base width

At larger values of VCB Wider Depletion

Region for larger values of VCB

JE JC

- - - - +

- - - - +
Emitter collector
- - - - +
Emitter Base Collector

P - - - - + N
N

- - - - +

Total base width

VCB increases

 Thus increase in VCB the input IE increases slightly

 Characteristics of a transistor in CB configuration
Input characteristics
“Early effect” or “base width modulation”.
zero effective base width

At larger values of VCB Wider Depletion

Region for larger values of VCB

JE JC

- - - - - - +

- - - - - - +
Emitter collector
- - - - - - +
Emitter Base Collector
-P - - - - - + N
N

- - - - - - +

Total base width

VCB increases extremely

 For extremely large VCB the effective base width may be reduced to zero, causing voltage breakdown of a transistor.
 This phenomenon is known as punch through
 Characteristics of a transistor in CB configuration
Output characteristics
Constant

E IE C
IC
N P N
• output characteristics is always

+ A graph of output current versus

RE JE JC VCB RC output voltage.

• For the CB configuration, output

- + - +
Current is IC and output voltage
B
Is the collector to base voltage VCB
VEE
VCC

• Input characteristics is plotted at

Constant IE IC C a constant input current IE
E

- +
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Constant
(mA)
IE=0 C
E
N P N IC

+
RE JE JC VCB RC

- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=0 IC C
E

- +
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Constant
(mA)
IE=0 C
E
N P N IC

+
RE JE JC VCB RC

- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=0 Cutoff region

IC C
E Both the junction

+ Becomes reverse bias

-
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Constant
(mA)
IE=1 mA C
E
N P N IC

+
RE JE JC VCB RC

1 IE=1 mA
- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=1 mA Cutoff region

IC C
E Both the junction

+ Becomes reverse bias

-
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Constant
(mA)
IE=2mA C
E N P N IC

+
RE JE JC VCB RC
2
IE=2 mA

1 IE=1 mA
- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=2mA Cutoff region

IC C
E Both the junction

+ Becomes reverse bias

-
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Constant
(mA)
IE=3mA C
E N P N IC

+ 3 IE=3 mA

RE JE JC VCB RC
2
IE=2 mA

1 IE=1 mA
- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=3mA Cutoff region

IC C
E Both the junction

+ Becomes reverse bias

-
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Active region
Constant
(mA) (high output dynamic
IE=3mA C
E N P N IC resistance)

+ 3 IE=3 mA

RE JE JC VCB RC
2
IE=2 mA

1 IE=1 mA
- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=3mA Cutoff region

IC C
E Both the junction

+ Becomes reverse bias

-
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
IC
Active region
Constant
(mA) (high output dynamic
IE=3mA C
E N P N IC resistance)

+ 3 IE=3 mA

RE JE JC VCB RC
2
IE=2 mA

1 IE=1 mA
- + - +
IC=ICBO
IE=0
B
VEE
VCC
-1 0 5 10 VCB

Constant IE=3mA Cutoff region

IC C
E Both the junction

+ Becomes reverse bias

-
RC
RE VEB VCB

- saturation region
+
Both the junction
- + - +
Becomes forward bias

B VCC
VEE
 Characteristics of a transistor in CB configuration
Output characteristics
Dynamic output resistance of the transistor :

Ro = ΔVCB / ΔIC
for IE constant
 Characteristics of a transistor in CB configuration
Output characteristics
Dynamic output resistance of the transistor :

Ro = ΔVCB / ΔIC
for IE constant
• This is nothing but the reciprocal of the output
characteristics in the active region.
• Slope of the output characteristics in the active region is
very small.
• Therefore the dynamic resistance Ro in the active region is
high.
• That’s why the voltage drop across the transistor is very
large in active region
 Characteristics of a transistor in CB configuration
Output characteristics

IC
Active region
(mA) (high output dynamic

resistance)

3 IE=3 mA

saturation region
2
IE=2 mA
Both the junction

Becomes forward bias

1 IE=1 mA
IC=ICBO

IE=0

-1 0 5 10
VCB (max)
Cutoff region

 The maximum value of output voltage VCB is limited to a certain value to ensure the operation of transistor.

 The maximum VCB is decided by the breakdown voltage of the reverse biased collector base junction
 Characteristics of a transistor in CB configuration
Output characteristics

IC
Active region
(mA) (high output dynamic
Breakdown takes
resistance)
place

Hence large Ic flows

3 IE=3 mA

saturation region
2
IE=2 mA
Both the junction

Becomes forward bias

1 IE=1 mA
IC=ICBO

IE=0

-1 0 5 10
VCB (max)
Cutoff region

 If applied voltage is higher than VCB(MAX), then the CB junction will breakdown allowing a very high current to flow

through it.
 Characteristics of a transistor in CB configuration
Output characteristics

IC
Active region
(mA) (high output dynamic
Breakdown takes
resistance)
place

Hence large Ic flows

3 IE=3 mA

saturation region
2
IE=2 mA
Both the junction

Becomes forward bias

1 IE=1 mA
IC=ICBO

IE=0

-1 0 5 10
VCB (max)
Cutoff region

 Due to excessive heat produced by this current, the transistor may get damaged. The type of breakdown is avalanche

breakdown.
 Characteristics of a transistor in CB configuration
Transfer characteristics

IE
C
E N P N IC

+
• Transfer characteristics is a graph
RE JE JC VCB RC
Of output current (Ic) versus input

Current (IE)
- + - +

B
• This characteristics is also called as
VEE
VCC Current gain characteristics.

IE IC
• The transfer characteristics is
C
E
plotted for constant value of VCB
- +
RC
RE VEB VCB

-
+
- + - +

B VCC
VEE
 Characteristics of a transistor in CB configuration
Transfer characteristics

IC (mA)
VCB constant
4

Slope = ΔIC / ΔIE = αdc

0 1 2 3 4
IE (mA)
 Characteristics of a transistor in CB configuration
Transfer characteristics

IC (mA)
VCB constant
4

Slope = ΔIC / ΔIE = αdc

0 1 2 3 4
IE (mA)

α dc = ΔIC / ΔIE