Week – 2 (08-08-2022)

Live Tutorial session on

Fundamentals of Electronic Device Fabrication

Indian Institute of Technology Madras
Course ID: noc22-mm29

by
Santhra Krishnan P
Research Scholar (PMRF)
Department of Metallurgical and materials Engineering
Indian Institute of Technology Madras
Quick Recap
• Layering → Oxide layer formation

• Dry ox and Wet ox

• Thin oxides vs. thick oxides

Governing equations
and reactions
• Doping

• Thermal diffusion and Ion Implantation

• Different types of sources

• Lithography Process Overview

• Positive and Negative Resists

• Processes involved

• Factors affecting lithography

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Practice Questions

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Questions
1. The depth below the surface at which dopant ion concentration is maximum in ion
implantation is called • Range : max. conc. below surface
a) Range • Drive in: diffusion of dopants into wafer
• Penetration depth: depth up to which
b) Drive-in
dopant penetrates
c) Penetration depth • Diffusion length: in Gaussian solution for
d) Diffusion length solid sources in thermal diffusion

2. Which among the following are examples of a solid and liquid dopant source
a) AsH3
b) BBr3 liquid
solid
c) Sb2O3
liquid
d) POCl3
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Questions Thin oxide Thick oxide
(1 – 100 nm) (.01 – 1 μm)
3. In oxide growth, parabolic rate law is
• Linear oxide growth • Parabolic oxide growth
obeyed under what conditions? • • Diffusion controlled
Reaction controlled
a) Thin oxide layer • Growth rate is constant • Growth rate decreases
• Thickness is with time
b) Thick oxide layer proportional to time • Thickness is
proportional to the
c) When reaction is the rate limiting square root of time
step
d) No oxide layer
Thickness (nm) Application
4. A typical thickness value for a field
6 -10 Tunnelling gates
oxide layer is ______ nm
15 – 50 Gate oxides, dielectric capacitor gates
a) 5
20 – 50 LOCOS pad oxide
b) 50 200 - 500 Hard masks, surface passivation
c) 100 300 – 1000 Field oxides

d) 500 Fundamentals of Electronic Device Fabrication - NPTEL Live 5

Questions
5. Which of the following statement is true regarding the concentration profile with
respect to doping from a gaseous source?
a) It is uniform along the depth
b) It has a Gaussian dependence on the depth
c) It has a parabolic dependence on the depth
d) It has an error function dependence on the depth
6. The diffusion coefficient is lower for A than B, at the same temperature when
− 𝑬𝒂
a) Activation energy of A is greater than B 𝑫= 𝑫𝟎 𝐞𝐱𝐩
𝒌𝑩 𝑻
b) Activation energy of A is less than B
c) When activation energies are equal
d) Diffusion coefficient is independent of activation energy
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Questions
7. In order to grow an oxide layer 100 nm thick, the thickness of silicon consumed is
approximately
a) 25 is the oxide layer thickness
′
𝒅 𝟏 .𝟖𝟖 𝒅 and is the thickness of Si
b) 50 consumed
c) 100
d) 200
8. The hard copy of the pattern which has to be transferred is called
a) Reticle
b) Resist
c) Stepper
d) Developer

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Questions
9. List the steps involved in Photolithography

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Questions
10. The process in which unreacted resist is removed after exposure is called
a) Developing
b) Soft bake
c) Alignment
d) Spin coating
11. Which of the following statements is false when using a positive photoresist?
a) Exposure to light makes the resist less soluble
b) Exposure to light makes the resist more soluble
c) The resist directly transfers the pattern from the mask to the wafer
d) The resist layer is applied by spin coating

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Questions

12. SU-8 is an example of

a) Positive resist
b) Negative resist
c) Solvent
d) Developer
13. Which of the following is not part of the photolithography process?
a) Sputtering
b) Spin coating
c) Baking
d) Exposure

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Questions
14. For a 248 nm laser source, the minimum feature size obtained in air is ______ nm
a) 258 𝝀
𝝈=𝒌
b) 124 𝑵𝑨
For conventional lithography in air,
c) 86 𝑵𝑨=𝝁 𝐬𝐢𝐧 𝜶 NA = 1
d) 71
15. What will be case if immersion lithography is used in the above case
a) 248
b) 142
For immersion lithography in water,
c) 86
NA = 1.44
d) 71

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 Thank you for you kind attention.

Please post additional questions in the discussion forum or

email me at santhra.pmrfiitm@gmail.com
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