POWER SEMICONDUCTOR DEVICES

Gayathri Devi B
Department of Electrical and Electronics Engineering
Power Semiconductor Devices

 Combining different types by forming junctions and having control inputs

give rise to a variety of power semiconductor devices.
Classification:
• Number of Junctions

• Controlled / Uncontrolled

• Majority / Minority Carrier

• Operating quadrants

• Material
Power Semiconductor Devices
Power Semiconductor Devices

Number of Junctions:

 Single junction – Diode, solar cells, LEDs

 Two junctions – Transistor, MOSFET , IGBT

 Three junctions – Thyristor

 Power Semiconductor Devices
 Control
 Diode – Uncontrolled

 SCR – Semi controlled

Since once turned ON, it does not turn OFF till current goes below holding
current commutation circuits.

 MOSFET, BJT, IGBT – Complete control on turn ON and turn OFF

Voltage controlled or current controlled
Power Semiconductor Devices

Carrier type
Minority carriers – Transistor IGBT, SCR

Majority carrier – Field effect devices

N type: electrons are majority carriers

P type: Holes are majority carriers
Power Semiconductor Devices
 Power Semiconductor Devices

Quadrants of operation as a switch

 Voltage blocking capability and direction of current flow

 Single quadrant
Both voltage and current unidirectional

 Two quadrant
Either voltage or current bi-directional
Other quantity unidirectional

 Four quadrant
Both voltage and current bidirectional
Power Semiconductor Devices
Classification of power semiconductor devices:
 Uncontrolled turn on and turn off (e.g.: diode).
 Controlled turn on and uncontrolled turn off (e.g. SCR)
 Controlled turn on and off characteristics (e.g. BJT, MOSFET, GTO, SITH, IGBT,
SIT, MCT).
 Continuous gate signal requirement (e.g. BJT, MOSFET, IGBT, SIT).
 Pulse gate requirement (e.g. SCR, GTO, MCT).
 Bipolar voltage withstanding capability (e.g. SCR, GTO).
 Unipolar voltage withstanding capability (e.g. BJT, MOSFET, GTO, IGBT, MCT).
Bidirectional current capability (e.g.: Triac, RCT).
 Unidirectional current capability (e.g. SCR, GTO, BJT, MOSFET, MCT, IGBT,
SITH, SIT & Diode).
THANK YOU
Gayathri Devi B
Associate Professor
Department of Electrical and Electronics Engineering

gayathridb@pes.edu