DIODE AND

BAISING OF DIODE
WHAT IS A DIODE ?
● A DIODE IS A SEMICONDUCTOR DEVICE THAT ALLOWS THE CURRENT TO FLOW
IN ONE DIRECTION BUT RISTRICTS IT FROM FLOWING IN THE OPPOSITE
DIRECTION

● A DIODE IS A TINY BUT CRUCIAL ELECTRONIC COMPONENT FOUND IN

COUNTLESS DEVICES AROUND US

● ELECTRONIC ONE-WAY STREET

REPRESENTATION OF A DIODE
 Working of a diode
• In the N-type region, electrons are the majority charge carriers and
holes are minority charge carriers. In the P-type region, the holes are
majority charge carrier and the electrons are negative charge carriers.
Because of the concentration difference, majority charge carriers
diffuse and recombine with the opposite charge. It makes a positive
or negative ion. These ions are collected at the junction. And this
region is known as the depletion region.
• When anode terminal of diode is connected with a negative terminal
and cathode is connected with the positive terminal of a battery, the
diode is said to be connected in reverse bias
• Similarly, when anode terminal is connected with a positive terminal
and cathode is connected with the negative terminal of the battery,
the diode is said to be connected in forward bias.
Biasing of Diode
• Forward Biasing
• Reverse Biasing
 What is biasing ?
• To apply potential difference across the terminals of a
diode is called biasing of a diode

• There are two types of biasing of diodes that are as

follows
• Forward biasing
• Reversed biasing
 forward biasing
• Forward biasing is a key concept in semiconductor
physics, particularly in the operation of diodes.
When a diode is forward biased, it means that a
voltage is applied across the diode in a direction
that allows current to flow through it easily.
• Band Diagram: In the absence of an external
voltage, there is a built-in potential across the PN
junction due to the diffusion of charge carriers. This
potential creates a barrier for the flow of current. In
the band diagram of a diode, the Fermi levels of
the P and N regions are aligned, creating a
depletion region where there are no mobile charge
carriers
• Reduction of Barrier: The positive terminal of the voltage
source repels holes in the P-type material, while the negative
terminal repels electrons in the N-type material. This reduces
the width of the depletion region, allowing majority carriers
(holes in the P-type and electrons in the N-type) to move
towards the junction
• Conduction: As the width of the depletion region decreases,
the electric field within the depletion region also decreases.
When the applied forward voltage is sufficient to overcome
the remaining barrier, charge carriers can easily cross the
junction and current can flow through the diode. Electrons
move from the N-type material to the P-type material, and
holes move from the P-type material to the N-type material
• Applications: Forward biasing is essential for the operation
of diodes in many electronic circuits, including rectifiers,
amplifiers, and signal demodulators. It allows controlled
current flow in one direction while blocking current flow in the
opposite direction, enabling various functionalities in
electronic devices.
 Reversed biasing
• Reversed biasing is the opposite of forward
biasing and refers to the application of a voltage
across a diode in a direction that prevents
current flow through it a diode consists of a PN
junction, where P-type and N-type
semiconductor materials are joined together. In
the absence of an external voltage, a natural
potential barrier exists at the junction due to the
difference in doping concentrations between the
P and N regions
• Band Diagram: In the band diagram of a reverse-biased diode,
the Fermi levels of the P and N regions remain aligned as in the
forward bias case, but the external voltage source is applied in
such a way that the positive terminal is connected to the N-type
material and the negative terminal to the P-type material
• Increasing Barrier: When a diode is reverse biased, the
external voltage increases the potential barrier at the PN
junction. The positive terminal repels holes in the P-type
material, while the negative terminal repels electrons in the N-
type material, widening the depletion region
• Depletion Region Expansion: As the applied reverse voltage
increases, the width of the depletion region also increases,
resulting in a stronger electric field across the junction. This
prevents majority carriers (electrons in the N-type and holes in
the P-type) from crossing the junction.
• Current Flow: Due to the widened depletion region and the
increased potential barrier, only a very small leakage current,
known as the reverse saturation current, flows through the
diode in the reverse-biased state. This current is typically on
the order of nanoamperes to microamperes and is mainly due
to minority carrier diffusion and thermally generated carriers
• Breakdown: If the reverse voltage exceeds a certain threshold
known as the breakdown voltage or reverse breakdown
voltage, the diode can undergo a phenomenon called reverse
breakdown. This can occur via mechanisms such as Zener
breakdown or avalanche breakdown, where the diode
suddenly conducts significant current in the reverse direction
• Applications: Reverse biasing is crucial in certain
applications such as Zener diodes and avalanche diodes,
which are designed to operate in the reverse breakdown
region to provide voltage regulation or protection against
voltage spikes. Reverse-biased diodes are also used in
rectifiers to block reverse current flow during operation
What is a PN Junction?
The PN junction in a semiconductor is created by the doping
process, typically silicon (Si) or germanium (Ge), is doped with
impurities to create regions of different electrical properties
Specifically, it consists of two regions: the P-type region and the N-
type region.
P-Type Region:
The P-type region is created by doping the semiconductor material
with acceptor impurities, which introduce "holes" or positive charge
carriers into the material. These acceptor impurities can be
elements like boron (B). gallium (Ga), indium (In), aluminum
(Al) etc.
• N-Type Region:
The N-type region is formed by doping the semiconductor material
with donor impurities, which introduce free electrons or negative
charge carriers into the material. Common donor impurities
include elements like phosphorus (P).

Formation of the Junction:

When the P-type and N-type regions are brought into contact, the
free electrons from the N-type material diffuse across the junction
into the P-type material, and the holes from the P-type material
diffuse across the junction into the N-type material. This diffusion
process creates a region near the junction called the depletion
region.
Diode Behavior:
In a diode, the PN junction is typically utilized to allow current flow in
one direction while blocking it in the opposite direction. When a
forward bias voltage is applied (positive potential to the P-type side
and negative potential to the N-type side), it reduces the potential
barrier, allowing current to flow through the diode

Applications:
PN junctions are fundamental to the operation of various
semiconductor devices, including diodes, transistors, and integrated
circuits. They are utilized in a wide range of electronic applications,
including rectification (converting AC to DC), signal demodulation,
voltage regulation, and switching.
 Types of Diode
• P-N Junction Diode:
The P-N junction diode is also known as rectifier diodes(AC current
to DC). These diodes are used for the rectification process and are
made up of semiconductor material. The P-N junction diode includes
two layers of semiconductors. One layer of the semiconductor
material is doped with P-type material and the other layer with N-type
material. The combination of these both P and N-type layers form a
junction known as the P-N junction. Hence, the name P-N junction
diode.
P-N junction diode allows the current to flow in the forward direction
and blocks the flow of current in the reverse direction.
• Avalanche Diode:
• An avalanche diode is a special type of
semiconductor device designed to operate in
reverse breakdown region.
• It is used to protect electrical systems from excess
voltages.
• The symbol of avalanche and zener diode is same.
• Applications :
• Avalanche diode used in protecting circuits.
• range finding, imaging, high-speed laser scanners,
laser microscopy,

• SYMBOL
• Laser Diode:
It is a different type of diode as it produces coherent light.
• It is highly used in CD drives, DVDs and laser devices. These are
costly when compared to LEDs and are cheaper when compared
to other laser generators.
• Limited life.

I
• Zener Diode:
• Zener diodes are semiconductor devices that allow
current to flow in both directions but specialize in
current flowing in reverse.
• Also known as breakdown diodes.

SYMBOL;
• Photodiode:
A photodiode is a semiconductor device that converts light into an
electrical current.
• They are also called a photo-detector, a light detector, and a
photo-sensor.
• Photodiodes are designed to work in reverse bias condition.
• Photodiodes are used for a variety of applications, including
optical communication, medical imaging, and scientific research.
• It used in solar cells and photometers. They are even used to
generate electricity.
• schottky diode:
• The schottky diode is a type of metal -
semiconductor junction diode.
• which is also known as hot-carrier diode, low voltage diode or
schottky barrier diode.
• Schottky diode offers fast switching action and has a low forward
voltage drop..
• The forward voltage drop of the Schottky diode is low between
0.2 to 0.3 volts.
• Current is the dependent variable while voltage is the
independent variable in the Schottky diode.
• Light Emitting Diode (LED):
• A light-emitting diode (LED) is a semiconductor device that
emits light when an electric current flows through it.
• LEDs allow the current to flow in the forward direction and
blocks the current in the reverse direction.
• USES
• Used for TV back-lighting
• Used in displays
• Used in Automotive
• LEDs used in the dimming of lights
 AGR HA BHI
TO NA KRNA
JAZAKALLAH