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2017 Ch2-MOS Transistors
2017 Ch2-MOS Transistors
MOS
Transistor
Theory
1. MOS transistor operation
2. I-V characteristics
3. C-V characteristics
4. DC transfer characteristics
- p-type body
– Accumulation
– Depletion (a)
depletion region
+
-
(b)
Vg > Vt
inversion region
+
- depletion region
(c)
+ +
– Vgs = Vg – Vs Vgs Vgd
- -
– Vgd = Vg – Vd
Vs Vd
-
– Vds = Vd – Vs = Vgs - Vgd Vds +
Vgs = 0 Vgd
+ g +
- -
s d
n+ n+
p-type body
b
Vgs > Vt
Vgs > Vgd > Vt
+ g +
- - Ids
s d
n+ n+
0 < Vds < Vgs-Vt
p-type body
b
Vgs > Vt
g Vgd < Vt
+ +
- -
s d Ids
n+ n+
Vds > Vgs-Vt
p-type body
b
I ds Vgs Vt dsat V
V
2 dsat
Vt
2
V gs
2
0 Vgs Vt cutoff
Vds V V V
I ds Vgs Vt ds linear
2
ds dsat
Vgs Vt
2
Vds Vdsat saturation
2
W 1 2
i D ( nC ox ) (GS Vt ) DS DS (4.5)
(5) 1 W
L 2 iD k (GS Vt )
2
(saturation region) (4.6a)
(6a)
2 n L
Khi vào miền bão hòa, υDS= υGS - Vt
W
1 W L : Aspect ratio of the MOSFET
iD ( nC ox ) (GS Vt ) (4.6)
2
(6) (Tỉ số hình dạng của MOSFET)
2 L
18
Example
We will be using a 0.6 m process for your project
– From AMI Semiconductor
– tox = 100 Å 2.5
Vgs = 5
– = 350 cm2/V*s 2
Ids (mA)
Plot Ids vs. Vds 1
Vgs = 3
– Vgs = 0, 1, 2, 3, 4, 5 0.5
Vgs = 2
Vgs = 1
– Use W/L = 4/2 0
0 1 2 3 4 5
W 3.9 8.85 1014 W W Vds
Cox 350 8 120 μA/V 2
L 100 10 L L
Vgs = -3
Ids (mA)
-0.4
-0.6
n / p = 2
Vgs = -5
-0.8
-5 -4 -3 -2 -1 0
Vds
polysilicon
gate
W
tox
L SiO2 gate oxide
n+ n+ (good insulator, ox = 3.90)
p-type body
Idsn = |Idsp|
– We could solve equations
– But graphical solution gives more insight
2: MOS Transistor Theory CMOS VLSI Design 4th Ed. 31
Transistor Operation
Current depends on region of transistor behavior
For what Vin and Vout are nMOS and pMOS in
– Cutoff?
– Linear?
– Saturation?
Idsn Vgsn4
-Vdsp Vgsn3
-VDD Vgsn2
Vgsp1 Vgsn1
Vgsp2 0 VDD
Vgsp3 Vdsn
Vgsp4 -Idsp
Vgsp5
Vin0 Vin5
Vin1 Vin4
Idsn, |Idsp|
Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
VDD
Vout
Vin1 Vin4
Idsn, |Idsp|
VDD
Vin2 Vin3
Idsp
Vin3 Vin2 Vin Vout
Vin4 Vin1 Idsn
VDD
Vout
Vin0 Vin5
in5
Vin1 Vin4
Idsn
dsn, |Idsp
dsp
|
Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
in0
VDD
DD
Vout
out
Vin0 Vin1
VDD Vin2
Vin0 Vin5
A B
Vout
Vin1 Vin4
C
Vin2 Vin3
Vin3
Vin3 Vin2 D Vin4 Vin5
Vin4 Vin1 E
0 Vtn VDD/2 VDD+Vtp
VDD VDD
Vout Vin
Vin Vout
0
VDD
Vin
Vout
p/ n > 1
Vin Vout
VOL
Vin
0
Vtn VIL VIH VDD- VDD
|Vtp|
VDD
VDD-Vtn
Vs = |Vtp|
VDD VDD-2Vtn
VSS