LECTURE I

Introduction to Module:
ELE101
Content
• Module aims
• Learning Outcomes
• Mode of Assessment
• Subject Matter
• Reading List
Module Aims
familiarize with Semiconductor theory, pn
junction diode, Zener diode, the static
characteristics of BJT and general idea about
JFET, FET, CMOS, MOSFET with characteristics.

design transformer coupled Class A and Class B

power Amplifier.
Learning Outcomes
• Explain the Semiconductor band theory and atomic structures of
semiconductor elements
• Analyse the characteristic of pn junction diode
• Construct the half and full wave rectifiers, Clipper and clamper
circuit using pn junction diode.
• Explain the basic concepts of transistors in CE, CB and CC
configuration.
• Analyse different biasing circuits
• Design a single stage CE amplifier using data sheet of
appropriate components.
• Construct h-model and r-model equivalent circuits.
• Find the voltage gain, current gain, input and output impedance
of transistors.
• Design Power Amplifier of class A and class B
• Explain the basic integrated circuit designs and its parameters
 Mode of Assessment
Marks
Marks
Sl. No. Mode of Assessment Nos. Allocate
(%)
d
1 Continuous Assessment (Theory)

1.1 Term Test 2 20

25
1.2 Assignment (due 20th April) 1 5
2 Practical

2.1 Regular Assessments 15 25 (absence

in any of the
2.2 Practical Exam 1 5 assessment
Viva-Voce will be
2.3 1 5 considered
fail)
3 Semester End Examination 1 50 50
Subject Matter
Unit I: Semiconductor Theory:
1.1 Atomic Structure, Group III, IV, V Elements
1.2 Energy band theory
1.3 Fermi energy level
1.4 Heat developed in current carrying
conductors and thermal conductivity of
metals
1.5 Intrinsic and extrinsic semiconductors
1.6 Drift and diffusion currents
Subject Matter
Unit II: P N Junction Diodes:
• Formation of PN Junction; Characteristics of PN
Junction diodes;
• Half wave and full wave rectifiers, Ripple factor,
Rectification efficiency,
• filters;
• Interpretation of Data Sheet for Diodes;
• Zener diodes, its characteristics & use as a simple
voltage regulator;
• Clippers and Clampers: Construction, working
principles of Clippers,
• Peak detectors;
• General idea about LED, Photodiodes, Schottky diodes
 Subject Matter
Unit III: Transistors:
• Bipolar transistors, symbols and basic construction Amplification
action
• Transistor currents; CE, CB & CC configurations & corresponding
characteristics
• BJT as a switch
• Analysis of biasing circuits, Stability factor, Thermal stabilization and
run away
• h-parameter and remodel equivalent circuits, Small signal analysis of
transistor amplifiers
• Amplification, derivation of expressions for voltage gain, current gain,
input and output impedance of CC, CB and CE configuration, with
more focus on CE configuration;
• Design of a single stage CE amplifiers using data sheet of appropriate
components; General idea about JFET, FET, CMOS, MOSFET with
characteristics
Subject Matter
• Unit IV: Transistors Theory and Circuits
• Metal-insulator-semiconductor junctions
• Band diagram, n-p-n and p-n-p junctions (bipolar junction
transistor/BJT),
• Transistors characteristics: Emitter, Collector and Base
terminals, I-V characteristics, transfer characteristics, input-
output characteristics, current /voltage gain, mutual
conductance, transfer resistance (transresistance &
transconductance).
• Biasing and Stability of transistors’ bias circuits in different modes
• Self Bias -CE, CB, CC, Compensation techniques, Low and High
frequency model of transistor.
• T and ∏ models & parameters, Voltage & current amplifier.
• Audio and Radio Amplifier,
• Power amplifiers – Class A, B, AB, C, Push pull & Tuned amplifier.
Analysis of the amplifiers circuits with gain, input & output
resistance, power dissipation & stability
Subject Matter
Unit IV: Silicon wafer fabrication,
• Different techniques involved in Silicon wafer
fabrication.

Unit V: Power amplifiers:

• Classification of Power amplifier
• Distortion
• Description of RC coupled and transformer
coupled and direct coupled amplifiers
• Class A and Class B type amplifiers both
transformers coupled and transformer less
Reading List
Essential
• Millman & Halkias, “Integrated Electronics”, Tata McGraw Hill,
New Delhi,3rd Edition
• Chattopadhyaya, Rakhist, Saha and Porkait, “Foundation of
Electronics”, Prentice Hall of India, New Delhi, 2nd Edition
• Sze, S.M., “Physics of Semiconductor Devices”, Wiley
Interscience, Latest Edition
• Mukherjee, M., “Foundation of Electronics Devices” Prentice Hall
of India, New Delhi, 2nd Edition.
Additional
• Neaman, “ Semiconductor Physics & Devices”, Tata McGraw Hill,
New Delhi,3rd Edition
• Horowitz & Hill, “The Art of Electronics”, Cambridge University
Press, Latest Edition
• Smith, R.L., Electronics: Circuits & Devices, John Wiley & Sons Ltd
Contact details
dechenlhamo.cst@rub.edu.bt
# 1732 9319

Office:
First Floor, Right Wing
(next to exam cell)
New Adm. Building