DEPARTMENT OF TECHNICAL

EDUCATION,A.P.
Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics & communication Engg
Institute : Govt. Polytechnic, Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code : EE-305
Topic : Special devices(4/6)
Duration : 50Mts.
Sub Topic : UJT construction
Teaching Aids : Diagrams

EE-305.37 1
 Recap

• Already we discussed about

• Various special devices.

• And their circuit symbols.

EE-305.37 2
 Objectives

• Upon completion of this period the student will

be able to know

• the terminals of UJT.

• the layer diagram of UJT.

• Construction features of UJT.

• the specifications of UJT.

EE-305.37 3
UNI JUNCTION TRANSISTOR

DEVICE CIRCUIT SYMBOL

EE-305.37 4
 Construction of UJT

1
Uni junction transistor

• A Unijunction transistor is
generally referred as UJT.

• UJT is three terminal device.

EE-305.37 5
 UNI JUNCTION TRANSISTOR

1
Uni junction transistor
• The three terminals are :
Emitter, Base1, Base2.

• It essentially consists of
lightly doped N-type
silicon bar with a small
piece of heavily doped P-
type material.

EE-305.37 6
 UNI JUNCTION TRANSISTOR

1
Uni junction transistor

• Highly doped P-type

material alloyed to its one
side to produce single PN
junction.

• The single PN junction

accounts for terminology
Unijunction.

EE-305.37 7
 UNI JUNCTION TRANSISTOR

Uni junction transistor

• The heavily doped P-

region is called Emitter.

• The ends of the bar is

labeled as Base-1 and
Base-2.

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EE – 305 . 37 8
 UNI JUNCTION TRANSISTOR

1
Uni junction transistor

• The PN junction is formed

between Emitter and bar

• The resistance between

Base-1 and Base-2 is
called Inter base
resistance RBB.

EE-305.37 9
 Equivalent circuit of UJT

0 0

• The PN junction behaves

like a diode

• The lightly doped silicon

bar has high resistance
can be represented by
two resistors connected
in series RB1 and RB2.

EE-305.37 10
 Equivalent circuit of UJT
0

• The Resistance offered

by N-type bar between
Base-1 and Emitter is
referred as RB1.

• The Resistance offered

by N-type bar between
Base-2 and Emitter is
referred as RB2.

EE-305.37 11
 Equivalent circuit of UJT

0
CIRCUIT SYMBOL
• The Resistance of N-type
bar is known as Base
spreading resistance RBB.

• RBB = RB1 + RB2

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 Intrinsic stand off ratio

• The intrinsic stand-off

ratio is denoted by η.

• η = RB1/(RB1+RB2)

EE-305.37 13
 Intrinsic stand off ratio

• The intrinsic stand-off

ratio is the property of a
UJT is always less than
unity

• Typical range of η is
lies between 0.5 to 0.8

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EE-305.37 14
 Summary

• The device has only one PN junction hence it is

Unijunction device.

• It differs from ordinary diode that it has three terminals.

EE-305.37 15
 Summary

• The unijunction transistor Emitter is heavily doped where

N-region is lightly doped.

• The resistance between base terminals is high typically 4

to 10 k-ohms.

EE-305.37 16
 Summary

• Intrinsic stand-off ratio η = RB1/(RB1+RB2).

• Typical values of Intrinsic stand-off ratio( η ) is 0.5 to 0.8.

EE-305.37 17
 Quiz

1.The P-region in UJT is

a) Lightly doped

f) Randomly doped

C) Heavily doped

d) None

EE-305.37
2.The Unijunction transistor is

(e)Bipolar device

(b) Unipolar device

(i) Three layer device

(d) None

EE-305.37
 Frequently asked questions

2. Explain the constructional details of UJT?

2. List the terminals of UJT and write the function of each

terminal?

EE-305.37 20