CHAPTER 14

Operation
Construction
Characteristics

MOSFE
Physical

Agenda
Electric Circuit Devices
MOS
T

Semi conductor and devices

 Agenda
o MOS,CMOS,DMOS,VMOS,MOSFET
o Construction
o Physical Operation & Characteristics
o FET BIASING
o Structure and Operation of MOSFET
Operation
Construction
Characteristics
Physical

MOSFE

o Structure & Operation of BJT

Agenda
MOS
o Small Signal Model of BJT & MOS
T

Transistors
o SCHOTTKY Barriers, Tunnel, Varactor,
LED, Photo diode, Laser diode
o Low frequency response, Higher frequency
response, Basics of Amplifiers, Amplifiers,
Differential pair Amplifier, Operational
Amplifiers, Output Stages
o DC Biasing of BJT & MOS Amplifiers
 CMOS
A complementary metal-oxide semiconductor (CMOS) consists of a
pair of semiconductors connected to a common secondary voltage
such that they operate in opposite (complementary) fashion. Thus,
when one transistor is turned on, the other is turned off, and vice
versa.
Operation
Construction
Characteristics

MOSFE

DMOS
Physical

Agenda
MOS
The name “DMOS” comes from the smanner of sequence in which
T

the p- doped substrate is first diffused and later followed by highly

doped n+ source diffusion.
VMOS
A vertical metal oxide semiconductor is constructed by forming four
different diffused layers in silicon and then etching a V-shaped groove
in the middle ...
METAL OXIDE SEMICONDUCTOR

MOS CMOS DMOS VMOS

 MOSFET
 A metal oxide semiconductor field effect
transistor.
 It is used for switching or amplifying signals.
 The ability to change conductivity with the
amount of applied voltage can be used for
Operation
Construction
Characteristics

MOSFE
Physical

Agenda
amplifying or switching electronic signals.

MOS
 They can be made p-type & n-type

T
semiconductors.
 The main advantage is that it requires almost
no input current to control the load current,
when compared with bipolar transistors.
 The Two types of MOSFET are:
 Depletion-type
 Enhancement-type
 Construction of MOSFET
• Metallic Layer
• Oxide Layer on gate
• The metallic gate terminal in the MOSFET is
insulated from the semiconductor layer by a SiO2
layer or dielectric layer.
• The MOSFET consists of three terminals, they are S,
Operation

Construction
Characteristics

MOSFE
Physical

Agenda
G, D and the body which is called as substrate. The

MOS
substrate is connected to the source internally.

T
 Physical Operation of MOSFET
o The MOSFET works as a switch
o The MOSFET controls the voltage and current flow
between the source and drain.
o The working of the MOSFET depends on the MOS
capacitor.

Construction
Characteristics

MOSFE

Agenda
MOS
Operation
Physical

T
Characteristics of MOSFET
• MOSFETs are tri-terminal.
• unipolar
• voltage-controlled
• High input impedance devices which form an
integral part of vast variety of electronic circuits.

Construction
Characteristics

MOSFE
services

Agenda
MOS
• These devices can be classified into two types
• depletion-type

T
a) N-Channel
b) P-Channel
• Enhancement-type
a) N-Channel
b) P-Channel
 Structure and operation of MOSFET
 The main principle is able to control the voltage and
current flow between the source and drain terminals.
 It works almost like a switch.
 Four-terminal device with source (S), drain (D) and gate
Terminal (G) and body (B) terminals. The body is
Structur
Compariso

MOSFE frequently connected to the source terminal, reducing the

DIODE

BJT
terminals to three.
T
e
n
 Applications of MOSFET
 MOSFET amplifiers used in radio frequency
applications.
 It acts as a passive element like resistor,
capacitor and inductor.
Structur
Compariso

MOSFE
DIODE

 DC motors can be regulated by power

BJT

MOSFETs.
e
n

 High switching speed of MOSFETs make it

an ideal choice in designing chopper circuits.
 Power MOSFETs are commonly used in
automotive electronics, particularly as
switching devices in electronic control units.
 Bipolar Junction Transistor BJT
o A bipolar junction transistor consists of a three-layer
“sandwich” of doped (extrinsic) semiconductor
materials, P-N-P or N-P-N.
o Each layer forming the transistor has a specific name,
and each layer is provided with a wire contact for
Structur
Compariso

MOSFE
DIODE

BJT
connection to a circuit.
e
n
 Structure and operation of BJT
o A Bipolar junction transistor to operate
as an amplifier.
o Two types P-N-P & N-P-N
o The emitter region is heavily doped,
Collector is moderately doped, and the

Structur
Compariso

MOSFE
DIODE

Base is slightly doped

BJT
e
n
 Comparison Between BJT & FET
BJT FET

• BJT gain is more • FET gain is less

• Its output impedance • Its output impedance

Structur
Compariso

MOSFE
DIODE

is high due to high is low due to low

BJT
gain gain

e
n
• Noise generated is • Voltage controlled
high. device.
• Thermal runway takes • Noise generated is
place. low
• Current controlled • Thermal runway
device bipolar doesn’t takes place.
Diode
A diode is a two-terminal electronic component that conducts
electricity primarily in one direction. It has high resistance on one end
and low resistance on the other end.

Types of Diodes

Comparison
Structur

MOSFE
DIODE

BJT
Comparison

e
• Light Emitting Diode
• Laser diode
• Schottky diode
• Photodiode
• Tunnel
• Varactor
 LED
Led is a full light-emitting diode. Its basic
structure is a p–n junction. The basic principle
is that electrons and holes in semiconductors
recombine and emit photons under forward
Amplifie

DIODE bias.
DIODE
DIODE

DIODE
Barrier

L-
V-

P-
T-
S-
r
 Photo diode
Photodiodes are often used for accurate measurement
of light intensity in science and industry. They
generally have a more linear response than
photoconductors.
Amplifie

DIODE
DIODE
DIODE
Barrier

L-
V-

P-
T-
S-
r
 Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode

laser) is a semiconductor device similar to a light-emitting
diode in which a diode pumped directly with electrical current
can create lasing conditions at the diode's junction.
Amplifie

DIODE
DIODE
DIODE
Barrier

L-
V-

P-
T-
S-
r
 Varactor Diode
• Varactor diode is a type of diode whose internal
capacitance varies with respect to the reverse voltage.
It always works in reverse biasing.
• A varactor diode is a simple variable capacitor that
allows oscillator circuits and other circuits to be
Amplifie

DIODE
DIODE

DIODE
easily tuned by applying a voltage. These diodes have
Barrier

a similar structure as a p-n diode; the structure of a

L-
V-

P-
T-
S-
r

varactor diode is rather simple and illustrates its

power as a component with nonlinear reactance.
 Tunnel Diode

• A Tunnel diode is a heavily doped p-n junction diode in

which the electric current decreases as the voltage
increases.
• In tunnel diode, electric current is caused by “Tunneling”.
Amplifie

DIODE
DIODE
DIODE
Barrier

The tunnel diode is used as a very fast switching device in

L-
computers. It is also used in high-frequency oscillators

V-

P-
T-
S-
r

and amplifiers.
 Schottky Barrier
The Schottky barrier is the energy difference between the
valence (or conduction) band edge of the semiconductor
and the Fermi energy of the metal, while the band offset is
the energy difference of valence (or conduction) bands of
Amplifie

DIODE
DIODE
DIODE
Barrier
two materials that construct the interface.

L-
V-

P-
T-
S-
r
Amplifier
An amplifier is an electronic circuit used to boost up the
strength of the weak signal. This signal can be a current,
voltage or power signal. It is a 2 port circuit that increases the
amplitude of the input signal and provides an amplified signal
at the output end.

Amplifie

DIODE
DIODE
DIODE
Barrier

L-
V-

P-
T-
S-
r
 Basics of Amplifier
 Amplifier works on the basic principle of converting the
DC power drawn from the power supply into an AC
voltage signal delivered to the load. Although the
Amplifie amplification is high the efficiency of the conversion from
the DC power supply input to the AC voltage signal
O-Stages
Amplifie

Amplifier
MOST

output is usually poor.

BJT

r
D-
r
 Differential pairs Amplifiers
 A differential amplifier multiplies the voltage difference
between two inputs (Vin+ - Vin-). It may have either one
output or a pair of outputs where the signal of interest is
the voltage difference between the two outputs.
 They provide immunity to external noise; a 6-dB increase
Amplifie
O-Stages
Amplifie

in dynamic range, which is a clear advantage for low-

MOST
BJT

voltage systems
r

D-
r
 Low frequency response Amplifier
o A speaker's frequency response range is a measurement of
how wide a selection of sounds it can reproduce.
o At low frequencies the capacitive reactance, XC, of these
capacitors affect the gain and phase shift of signals, so
they must be taken into account.

Amplifie
O-Stages
Amplifie

o 3dB less than at midrange is called the lower cutoff

MOST
BJT

frequency. the overall voltage gain also continues to

r
D-
r

decrease.
 Higher frequency response amplifier
o A typical amplifier consists of a differential amplifier used
as a voltage amplifier and common-collector circuits used
as current amplifiers or impedance converters
o The two RC circuits created by the internal transistor
capacitances influence the high frequency response of BJT

Amplifie
O-Stages

Amplifie
amplifiers. As the frequency increases and reaches the high
MOST
BJT

end of its midrange values, one of the RC will cause the

r
D-
r
amplifier's gain to begin dropping off.
 Output stages of amplifiers
o The main purpose of the output stage of an operational amplifier is to
deliver a certain amount of signal power into a load with acceptably
low levels of signal distortion. In a low-voltage low-power
environment, this has to be achieved by efficiently using the supply
voltage as well as the supply current.
o The amplifier's output is a sine wave, with about 1.5% distortion. The

Amplifie
O-Stages
Amplifie
MOST

relatively high distortion content is almost entirely due to the common

BJT

mode swing seen by the amplifier. Op amp common mode rejection

r
D-
r
suffers at high frequency, producing output distortion.
 Small signal model of BJT
A BJT small signal model is a non-linear replacement circuit for
the linear large signal model or typical transistor symbol that
incorporates the transistor’s DC bias conditions and allows for
evaluation of behavior when a small AC signal is applied.

Amplifie
O-Stages
Amplifie
MOST

BJT

r
D-
r
Small signal model of MOS transistor
• In the small-signal analysis, one assumes that the device
is biased at a DC operating point (also called the Q point
or the quiescent point).
• When input signal VS is very low, the MOS transistor
can be replaced by the small-signal model. The flow of

Amplifie
O-Stages
Amplifie
MOST
current is clockwise and is gm VGS, and V0 is connected

BJT
to load

r
D-
r
 DC Biasing
o The term biasing means the application of dc voltages used to
setup a fixed level of current and voltage.
o The function of the “DC Bias level” is to correctly set the
transistors Q-point by setting its Collector current ( IC ) to a
DC-Biasing constant and steady state value without any external input
DC-Biasing signal applied to the transistors Base.
Conclusion
Tysm
s
 DC biasing of BJT
o Biasing in BJTs may be defined as a process in which a BJT
is activated or switched ON by applying a smaller
magnitude of DC is across its base/emitter terminals so that
its is able to conduct a relatively larger magnitude of DC
DC-Biasing across its collector emitter terminals.

DC-Biasing
Conclusion

o Voltage divider bias is the best in terms of stability as it is

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independent of device parameter changes and also not

affected by variation in temperature.
s
 DC biasing of MOS transistor
The MOS transistor is biased within the saturation region to
establish the desired drain current which will define the
transistors Q-point. As the instantaneous value of VGS
increases, the bias point moves up the curve as allowing a
larger drain current to flow as VDS decreases.

DC-Biasing
DC-Biasing
Conclusion
Tysm

s
 Conclusions

So in Conclusions Transistors are the fundamental electronic

components present in any device. Their capability to act as a
switch or amplify current or voltage has enabled them to serve

DC-Biasing
DC-Biasing
Conclusion
diverse applications ranging from logic gates in the computer
Tysm

processors to sound amplifiers.

s
 Tysm
timeline
DC-Biasing
DC-Biasing