MODULE - 1

DIODES

1.5_ZENER DIODE

1
 ZENER DIODE
 The symbol of zener diode is similar to the normal
p-n junction diode, but with bend edges on the
vertical bar.
 Zener diode consists of two terminals: anode and
cathode.
 In zener diode, electric current flows from both
anode to cathode and cathode to anode.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 2

 ZENER DIODE
A normal p-n junction diode
 Forward bias - allows large amount of electric current
 Reverse Bias - blocks large amount of electric
current
 If reverse biased voltage applied is highly increased,
It causes a junction breakdown and a sudden rise in
current occurs.
 It leads to high power dissipation which will result in
the diode to become destructive.
A normal p-n junction diode does not operate in
breakdown region because the excess current
permanently damages the diode.
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 ZENER DIODE
A zener diode is a special type of p-n junction
semiconductor device designed to operate in the
reverse breakdown region.
 The breakdown voltage of a zener diode is carefully
set by controlling the doping level during
manufacture.
 The zener diodes have breakdown voltage range
from 3V to 200V.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 4

V-I characteristics of Zener Diode
 The dc voltage can be applied to the zener diode so
as to make it forward biased or reverse biased.

Forward bias Reverse bias

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 5

V-I characteristics of Zener Diode

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 6

V-I characteristics of Zener Diode
 In the forward biased condition, the normal
diode and the zener diode operated in similar
fashion.
 But the zener diode is designed to be operated in
the reverse biased condition.
 In reversed biased condition, the diode carries
reverse saturation current till the reverse voltage
applied is less than the reverse breakdown
voltage.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 7

V-I characteristics of Zener Diode
 When the reverse voltage exceeds reverse
breakdown voltage, the current through it changes
drastically but the voltage across it remains almost
constant.
 Such a breakdown region is a normal operating
region for a zener diode.
 In the reverse biasing, reverse voltage (VR) starts

to increases the reverse current (IZ) remains

negligibly small up to the 'knee' of the curve.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 8

V-I characteristics of Zener Diode
 At this knee point the voltage is called zener
breakdown voltage VZ, remains constant.
There is a maximum value of zener current designated
as IZ(Max) above which diode may be damaged. The
value of this current is given by the maximum power
dissipation of zener diode.

 There is a minimum value of zener current called

break over current designated as IZ(min) which must be
maintained in order to keep the diode in breakdown.
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Zener Diode Breakdown Voltage
 There are two distinct mechanism due to which
breakdown may occur in the zener diode.
1. Zener breakdown
2. Avalanche breakdown
 The different breakdowns are usually differentiated
on the basis of doping concentration.
 When the PN- junction is highly doped, the zener
breakdown occurs while avalanche breakdown
occurs only when the PN- junction is very lightly
doped.
06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 10
 Zener Breakdown
 When the reverse bias voltage is 6V or less causes a
field across the depletion region of the order of 3 x 10 5
V/cm.
 Such high magnitude of electric field exerts a large
force on the valence electrons of the atom, tending to
separate them from the nucleus.
 Hence, electron-hole pairs are generated in large
numbers and a sudden increase of current is observed.
 This process is referred to as Zener breakdown.
 The diode may be destroyed due to the excessive heat
at the junction.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 11

 Avalanche Breakdown
 Avalanche breakdown occurs when the breakdown
voltage of zener diode is more than 6V.
 It occurs in both normal diodes and zener diodes at
high reverse voltage.
 When high reverse voltage is applied to the p-n
junction diode, the free electrons (minority carriers)
gains large amount of kinetic energy and accelerated
to greater velocities.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 12

 Avalanche Breakdown
 It collides with the atoms and knock off more
electrons. These electrons are again accelerated
and collide with other atoms.
 Because of this continuous collision with the atoms,
a large number of free electrons are generated.
 As a result, electric current in the diode increases
rapidly due to the generation of avalanche charge
carriers.
 At this stage, the junction is said to be in breakdown
and current starts increasing rapidly.
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 Advantages of zener diode
 Power dissipation capacity is very high
 High accuracy
 Small size
 Low cost

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 APPLICATIONS
 As a voltage regulating element in voltage
regulators.
 In various protection circuits.
 In zener limiters. i.e. clipping circuits which are
used to clipp off the unwanted portion of the
voltage waveform.

06/23/24 Dr. A. Radhika, Asso. Prof. / EEE / skcet 15

 Zener breakdown Vs Avalanche breakdown
Zener breakdown Avalanche breakdown
Breaking of covalent bonds is due Breaking of covalent bonds is due
to intense electric field across the to collision of accelerated charge
narrow depletion region. This carriers having large velocities
generates large number of free and kinetic energy with adjacent
electrons to cause breakdown atoms.
Occurs when reverse voltage less Occurs when reverse voltage
than 6V greater than 6V
Temperature coefficient is Temperature coefficient is positive
negative
The breakdown voltage The breakdown voltage increases
decreases as junction as junction temperature increases
temperature increases
The V-I characteristics is very The V-I characteristics is not as
sharp in breakdown region sharp as in zener breakdown
region
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