INTRODUCTION TO JFET

– The field-effect transistor (FET) is

an electronic device which uses an electric field to
control the flow of current. This is achieved by the
application of a voltage to the gate terminal, which in
turn alters the conductivity between the drain and
source terminals.
– FETs are also known as unipolar transistors since
they involve single-carrier-type operation. Many
different types of field effect transistors exist. Field
effect transistors generally display very high input
impedance at low frequencies
Junction field-effect transistor..
o There are 2 types of JFET
 n-channel JFET
 p-channel JFE
 Source: The terminal through which the majority
carriers enter into the channel, is called the source
terminal S .

 Drain: The terminal, through which the majority

carriers leave from the channel, is called the drain
terminal D .
 Gate: There are two internally connected heavily
doped impurity regions to create two P-N junctions.
These impurity regions are called the gate terminal
G.

 Channel: The region between the source and drain,

sandwiched between the two gates is called the
N-channel JFET
 Major structure is n-type material (channel)
between embedded p-type material to form 2
p- n junction.
 In the normal operation of an n-channel
device, the Drain (D) is positive with respect
to the Source (S). Current flows into the
Drain (D), through the channel, and out of
the Source (S)
 Because the resistance of the channel
depends on the gate-to-source voltage
(VGS), the drain current (ID) is controlled by
that voltage
N-channel fig 1-2..
P-channel JFET..
JFET Characteristic for VGS = 0 V and VDS> 0

 To start, suppose VGS=0

 Then, when VDSis increased, ID increases.
Therefore, ID is proportional to VDSfor small values
of VDS
 For larger value of VDS, as VDSincreases, the
depletion layer become wider, causing the
resistance of channel increases.
 After the pinch-off voltage (Vp) is reached, the ID
becomes nearly constant (called as ID maximum,
IDSS-Drain to Source current with Gate Shorted)
JFET for VGS = 0 V and VDS>0

Channel
becomes
narrower as
VDS is
increased
 Pinch-off voltage
(VGS = 0 V, VDS = VP).
Pinch off Voltage
As we continue to increase the
reverse bias of gate terminal the
depletion layer widens and a
point is reached where entire
channel is filled with depletion
layer and drain current will be
reduced to zero except for small
reverse saturation currents order
of nano amperes. The gate to
source voltage at which at which
the entire channel will be
depleted of charge carrier is
called pinch-off voltage.
ID versus for
VGS = 0 V and 0<VDS<|Vp|VDS

JFET Characteristic Curve

 JFET for VGS<0 AND VDS AT SOME +VE Value

( Application of a negative voltage to the gate of a JFET )

 JFET Characteristic Curve for
VGS<0, VDS AT SOME +VE VALUE

 For negative values of VGS, the gate-to-channel

junction is reverse biased even with VDS=0
 Thus, the initial channel resistance of channel is
higher.
 The resistance value is under the control of VGS
 If VGS = pinch-off voltage(VP)
The device is in cutoff (VGS=VGS(off) = VP)
 The region where ID constant – The saturation/pinch-
off region
 The region where ID depends on VDS is called the
linear/ohmic region
Characteristics for n-channel JFET
P-channel JFET

 P channel JFET:
 Major structure is p-type
material (channel) between
embedded n-type material to form
2 p-n junction.
 Current flow : from Source (S) to Drain
(D)
 Holes injected to Source (S) through p-
type channel and flowed to Drain (D)
p-Channel JFET
Characteristics for p-channel JFET

+
+

P
TRANSFER
CHARACTERISTICS CURVE
Transfer Characteristics..

–In JFET, the relationship between VGS (input

voltage)
and ID (output current) is used to define the
transfer characteristics. It is called as
Shockley’s Equation:
 V GS  2
ID = IDSS  1 -  VP=VGS (OFF)
VP 
The relationship is more complicated (and not
linear)
As a result, FET’s are often referred to a
square law devices
Transfer Characteristics…

 Defined by Shockley’s equation:

 V 
2

I D  I DSS 1 V GS  VP  VGS (off )

 GS (off ) 

 Relationship between ID and VGS.

 Obtaining transfer characteristic curve axis
point from Shockley:
 When VGS= 0 V, ID = IDSS
 When VGS= VGS(of)or Vp, ID = 0 mA
 THANKS FOR BEING WITH OUR
GROUP

ALI GOHAR
IRFAN ALI
DANISH ALI
AVINASH
KANWAR LAL
AND OTHERS