The Impact of GaN HEMTs on

Power Density in Motor Drives

Introduction
POWER device is an enabling technology to achieve efficient power conversion in power electronic converters. The
performance of these power devices can directly affect the efficiency of the power system. The existing Si-based device has
reached its performance restriction due to the limitation of its material property, and it is difficult to enhance overall
performance through the innovation of device principle, the improvement of structure and the progress of manufacturing
process. To achieve better conversion efficiency, the high-performance power devices are needed which have smaller
conduction losses and lower switching losses making them feasible for high-frequency, high-temperature operations. As an
example of the third generation of semiconductor materials, the wide band-gap semiconductor material GaN has a wider band
gap (band gap width greater than 3.4eV), high critical breakdown electric field, high anti-radiation ability and high electronic
saturation velocity. With all these benefits, the GaN devices can help to compensate the shortages of Si devices and improve the
performance.
Basic Structure
Advantages of GaN HEMTs over Silicon
Higher Switching Speeds
GaN HEMTs exhibit much faster
switching speeds compared to silicon
transistors. This rapid switching
capability reduces switching losses,
leading to improved efficiency.
Lower On-Resistance
GaN HEMTs have significantly
lower on-resistance than silicon
transistors, resulting in lower
conduction losses. This allows for
more power to be delivered to the
load with less energy dissipation.
Wider Bandgap
GaN's wider bandgap allows for
higher operating temperatures and
voltages, enabling the design of
smaller and more compact power
electronics systems.
Impact of GaN HEMTs on Power Density
1 Smaller Size and Weight
The improved efficiency and
reduced losses of GaN HEMTs
enable smaller and lighter
motor drive systems,
contributing to overall system
downsizing.
2 Higher Power Output
With their high switching
speeds and low on-resistance,
GaN HEMTs can handle higher
power levels within the same
physical footprint, resulting in
increased power density.
3 Improved System
Efficiency
The reduced switching and
conduction losses associated
with GaN HEMTs result in
higher system efficiency,
leading to lower energy
consumption and improved
overall performance.
Improved Switching Characteristics
1 Faster Rise and Fall Times
GaN HEMTs exhibit significantly faster rise and fall times compared to silicon transistors, leading to lower
switching losses.

2 Reduced Switching Noise

The rapid switching speeds of GaN HEMTs minimize switching noise, contributing to improved electromagnetic
compatibility (EMC) in motor drive systems.

3 Improved Controllability
The fast switching characteristics of GaN HEMTs enhance the controllability of motor drive systems, allowing for
precise and efficient motor control.
Reduced Conduction Losses
Lower On-Resistance
GaN HEMTs have significantly lower on-resistance than silicon transistors, resulting in lower conduction losses.

Improved Efficiency
The reduction in conduction losses leads to higher efficiency in motor drive systems, allowing for more power to be
delivered to the motor with less energy wasted.

Reduced Heat Generation

Lower conduction losses result in less heat generation within the motor drive system, improving thermal
management and extending device lifespan.
Thermal Management Considerations
Increased Power Density Higher power density in GaN HEMT-based motor drives
generates more heat, necessitating efficient thermal
management.

Thermal Resistance GaN HEMTs have higher thermal resistance compared to

silicon transistors, making heat dissipation a critical
design consideration.

Cooling Solutions Effective cooling solutions, such as heat sinks, fans, and
liquid cooling systems, are essential to ensure proper
thermal management and reliable operation.
Application of GaN HEMTs in Motor Drives

Industrial Automation Electric Vehicles Renewable Energy Aerospace

(EVs)
GaN HEMTs are used in GaN HEMTs enable the
GaN HEMTs enable the GaN HEMTs play a crucial wind turbine and solar design of compact and
development of smaller, role in improving the power inverter systems to efficient motor drives for
more efficient, and efficiency and performance enhance efficiency and electric aircraft and other
powerful motor drives for of electric vehicle motor reduce energy losses. aerospace applications.
industrial robots and drives, contributing to
automation systems. longer range and faster
acceleration.
Challenges
Material growth
GaN on silicon is widely used for
power devices because it's
cheaper, even though there's a
mismatch in their structures.
Device technology
In the aspect of device technology,
there are two main problems: the
first is to improve high voltage
capability, and the other is to
make the production of normally-
off (enhanced) devices.
Thermal dissipation and
Thermal design
Thermal dissipation is critical for
GaN power devices because high
power density can cause
significant self-heating, reducing
performance. This issue persists
even with SiC substrates, as
increased temperatures lower
efficiency and output power.
Reliability
GaN devices face reliability issues
due to strain, surface state
instability, high electric fields, and
junction temperature, which cause
defects and degradation.
Conclusion and Future
Outlook
GaN HEMTs are revolutionizing motor drive technology by enabling
smaller, more efficient, and powerful systems. Their high switching
speeds, low on-resistance, and ability to handle high voltages and
temperatures offer significant advantages over traditional silicon-based
transistors. As GaN technology continues to evolve, we can expect
further improvements in power density, efficiency, and performance in
motor drive applications. The future of GaN HEMTs in motor drives
holds immense potential for innovation and advancements in various
industries.
References
—>Thermal Analysis of Lateral GaN HEMT Devices for High Power Density Integrated Motor Drives Considering the Effect
of PCB Layout and Parasitic Parameters- https://ieeexplore.ieee.org/abstract/document/8450160

—>A Review of Gallium Nitride Power Device and Its Applications in Motor Drive-
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8677372