into three groups. Those are Low-cost, medium speed , 5V digital High Performance, high cost, 5V digital analog/digital ( requires wide range of power supplies) Low cost,medium speed , 5V digital BiCMOS process:
Drawbacks: 1. Collector region resistance is high( high
propagation delay) 2. Packing density is low High performance , high cost digital BiCMOS process:
These are of two types
1. Modification of p-well CMOS process
2. Twin well CMOS process
To improve the performance of BiCMOS circuits,
Buried layers are used P-well CMOS process:
It is also named as SBC BiCMOS process . Here packing density is low, less propagation delay. Twin well BiCMOS process:
High packing density , less delay
UNIT-II: INTEGRATION CONSIDERATIONS Threshold voltage adjustment for CMOS devices: Introducing boron causes a positive shift in threshold voltage for n-channel MOSFET . Introducing phosphorus causes a negative shift in threshold voltage for n-channel MOSFET . THANK YOU